IP Library Granted Patent US 9,281,076
Granted Patent B2
US 9,281,076 · App. 14/163,583 · Granted Mar 8, 2016

Semiconductor device

Inventor: Naohisa Nishioka (Tokyo, JP)
Assignee: PS4 Luxco S.a.r.l.
G11C17/18G11C13/0002G11C13/0004G11C7/22
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Quick Facts
Patent No.
US 9,281,076
App. No.
14/163,583
Granted
Mar 8, 2016
Kind
B2
Abstract

A semiconductor device has an antifuse element and a measurement unit. The antifuse element stores information according to whether the antifuse element is in the broken or unbroken state. The measurement unit determines a resistance value related to the resistance value of the broken antifuse element.

Claims (14)

1. A semiconductor device comprising:

an antifuse element storing information as one of a broken state and an unbroken state thereof; and

a measurement unit operative to perform a first operation that is carried out to determine whether the antifuse element is in the broken state or the unbroken state and a second operation that is carried out to measure a resistance value relative to a resistance value of the antifuse element in the broken state,

wherein the measurement unit comprises:

a determination voltage generating unit generating a determination voltage;

a measurement voltage generating unit generating measurement voltage that is independent of the determination voltage; and

a comparator comparing, in the first operation, a voltage level of one end of the antifuse element with the determination voltage and comparing, in the second operation, the voltage level of the one end of the antifuse element with the measurement voltage.

2. The semiconductor device as claimed in claim 1 , wherein the measurement voltage generating unit comprises:

a plurality of resistance elements, one ends of the resistance elements are connected in common; and

a selection unit connected in common to the other ends of the resistance elements and selecting one or ones of the resistance elements.

3. The semiconductor device as claimed in claim 1 , wherein the determination voltage generating unit maintains, in the first operation, a voltage level of the determination voltage at a substantially constant level, and the measurement voltage generating unit changes, in the second operation, a voltage level of the measurement voltage in stepwise manner.

4. The semiconductor device as claimed in claim 1 , further comprising an external terminal, wherein the comparator supplies, in the second operation, a compare result in the external terminal.

5. The semiconductor device as claimed in claim 1 , wherein the measurement unit further comprises a selector receiving the determination voltage and the measurement voltage, and the selector supplies, in the first operation, the determination voltage to the comparator and supplies, in the second operation, the measurement voltage to the comparator.

6. The semiconductor device as claimed in claim 1 , wherein the first operation is a normal operation and the second operation is a test operation.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2018
From: LONGITUDE SEMICONDUCTOR S.A.R.L.
To: LONGITUDE LICENSING LIMITED
Reel/Frame 046865/0667 →
CHANGE OF NAME Recorded Aug 24, 2016
From: PS5 LUXCO S.A.R.L.
To: LONGITUDE SEMICONDUCTOR S.A.R.L.
Reel/Frame 039793/0880 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2016
From: PS4 LUXCO S.A.R.L.
To: PS5 LUXCO S.A.R.L.
Reel/Frame 039818/0506 →
Priority Claims (1)
JP 2008-281595 · Oct 31, 2008 · national
Continuity (2)
Continuation 12609907 · Oct 30, 2009
Related Publication 20140140160A1 · May 22, 2014