Method for improving CD micro-loading in photomask plasma etching
View Patent ↗Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl 2 , O 2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl 2 and O 2 is supplied at a Cl 2 :O 2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.
1. A method of etching an absorber layer disposed on a photomask, comprising:
transferring a film stack disposed on a substrate into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer;
providing an etching gas mixture including Cl 2 , O 2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl 2 and O 2 gases are supplied at a flow rate Cl 2 :O 2 ratio between about 10:1 to 20:1 and the hydrocarbon gas is supplied between 2 percent and about 20 percent to the etching gas mixture by volume;
supplying a RF source power to form a plasma from the etching gas mixture; and
etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.
2. The method of claim 1 , wherein a molybdenum containing layer is disposed between the chromium containing layer and the substrate.
3. The method of claim 2 , wherein the molybdenum containing layer is at least one of a Mo layer, MoSi layer, MoSiN layer, and MoSiON layer.
4. The method of claim 1 , wherein the chromium containing layer is at least one of a Cr metal, chromium oxide (CrO x ), chromium nitride (CrN) layer, and chromium oxynitride (CrON).
5. The method of claim 1 , wherein the hydrocarbon gas is at least one of CH 4 , C 2 H 6 , and C 3 H 8 .
6. The method of claim 1 , wherein supplying the source RF power further comprises:
providing a plasma source power of between about 100 to about 3000 Watts.
7. The method of claim 1 , wherein supplying the RF power further comprises:
providing a plasma bias power of between about 10 to about 300 Watts.
8. A method of etching an absorber layer disposed on a photomask, comprising:
transferring a film stack disposed on a substrate into an etching chamber, the film stack having a chromium containing layer disposed on a molybdenum containing layer, wherein the chromium containing layer is partially exposed through a patterned photoresist layer;
providing an etching gas mixture including Cl 2 , O 2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl 2 and O 2 gases are supplied at a flow rate Cl 2 :O 2 ratio between about 10:1 to 20:1 and the hydrocarbon gas is supplied between 2 percent and about 20 percent to the etching gas mixture by volume;
supplying a RF source power to form a plasma from the etching gas mixture;
providing a plasma bias power of between about 10 Watts and about 300 Watts; and
etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.