VTFTs including offset electrodes
View Patent ↗A device with multiple vertical transistors includes a substrate and an electrically conductive gate structure including first and second edges opposite each other and including first and second reentrant profiles, respectively. A conformal electrically insulating layer maintains the reentrant profiles and is in contact with the gate. A conformal semiconductor layer maintains the reentrant profiles and is in contact with the insulating layer. First and second electrodes are in contact with first and second portions of the semiconductor and adjacent to the first and second reentrant profiles, respectively. A third electrode is in contact with a third portion of the semiconductor on a top of the gate structure. The first and third electrodes and the second and third electrodes define ends of first and second channels of first and second transistors, respectively. First and second lines, extending between the ends of the first and second channels, are not parallel.
1. A device including a plurality of vertical transistors comprising:
a substrate;
an electrically conductive gate structure on the substrate, the electrically conductive gate structure extending away from the substrate to a top, the electrically conductive gate structure including a first edge including a first reentrant profile and a second edge located opposite the first edge and including a second reentrant profile;
a conformal electrically insulating layer that maintains the first and second reentrant profiles and is in contact with the electrically conductive gate structure and at least a portion of the substrate;
a conformal semiconductor layer that maintains the first and second reentrant profiles and is in contact with the conformal electrically insulating layer;
a first electrode in contact with a first portion of the semiconductor layer and located adjacent to the first reentrant profile;
a second electrode in contact with a second portion of the semiconductor layer and located adjacent to the second reentrant profile; and
a third electrode in contact with a third portion of the semiconductor layer on the top of the electrically conductive gate structure, the first electrode and the third electrode defining ends of a first channel of a first transistor, the second electrode and the third electrode defining ends of a second channel of a second transistor, wherein a first line extending between the ends of the first channel is not parallel to a second line extending between the ends of the second channel.
2. The device of claim 1 , wherein the electrically conductive gate structure includes an electrically insulating material.
3. The device of claim 1 , wherein the conformal electrically insulating material layer has a uniform thickness.
4. The device of claim 1 , wherein the conformal semiconductor material layer has a uniform thickness.
5. The device of claim 1 , wherein one of the first electrode and the third electrode is the source electrode and the other of the first electrode and the third electrode is the drain electrode.
6. The device of claim 1 , wherein the substrate is flexible.
7. The device of claim 1 , wherein the first transistor and the second transistor are connected in series by the third electrode.
8. The device of claim 1 , wherein the electrically conductive gate structure includes a polymer post and an inorganic material cap on top of the polymer post.
9. The device of claim 1 , wherein the electrically conductive gate structure includes only conductive materials.
10. The device of claim 1 , wherein the first electrode, the second electrode, and the third electrode have the same material composition and thickness.