Fabricating VTFT with polymer core
View Patent ↗Fabricating a vertical transistor includes providing a structural polymer layer on a substrate. A patterned inorganic thin film is formed on the structural polymer layer, leaving exposed portions of the structural polymer layer not under the inorganic thin film. Exposed portions of the structural polymer layer and portions of the structural polymer layer between the patterned inorganic thin film and the substrate are removed to form a structural polymer post having an inorganic cap that extends beyond an edge of the structural polymer post defining a reentrant profile. A conformal conductive gate layer and a conformal dielectric layer on the gate layer are formed in the reentrant profile. A conformal semiconductor layer is formed on the dielectric layer. First and second electrodes are formed in contact with a first portion (over the cap) and a second portion (not over the post) of the semiconductor layer.
1. A method of fabricating a vertical thin film transistor comprising:
providing a substrate;
providing a structural polymer layer on the substrate;
forming a patterned inorganic thin film on the structural polymer layer, leaving exposed portions of the structural polymer layer not under the inorganic thin film; and
removing the exposed portions of the structural polymer layer and portions of the structural polymer layer between the patterned inorganic thin film and the substrate to form a structural polymer post having an inorganic cap that extends beyond an edge of the structural polymer post to define a reentrant profile;
forming a conformal conductive gate layer in the reentrant profile;
forming a conformal dielectric layer on the gate layer in the reentrant profile;
forming a conformal semiconductor layer on the dielectric layer;
forming a first electrode in contact with a first portion of the semiconductor layer located over the cap and a second electrode located in contact with a second portion of the semiconductor layer over the substrate and not over the post.
2. The method of claim 1 , wherein forming the patterned inorganic thin film on the structural polymer layer includes using a selective area deposition process.
3. The method of claim 1 , wherein forming the patterned inorganic thin film on the structural polymer layer includes using a photolithographic process.
4. The method of claim 1 , comprising using a single line of sight deposition process to form the first electrode and the second electrode.
5. The method of claim 1 , wherein providing a structural polymer layer on the substrate includes depositing an epoxy resin or polyimide.
6. The method of claim 1 , comprising using a plasma process or UV-ozone process to remove the exposed portions of the structural polymer layer and portions of the structural polymer layer between the patterned inorganic thin film and the substrate.
7. The method of claim 1 , wherein providing the structural polymer layer on the substrate includes depositing a polymer layer that is between 0.2 microns and 2 microns.
8. The method of claim 1 , further comprising depositing another conformal dielectric layer on the cap and the edges of the post prior to forming the conformal conductive gate layer.
9. The method of claim 1 , the structural polymer layer having a surface, further comprising treating the surface of the structural polymer layer to activate the surface of the structural polymer layer to facilitate inorganic thin film growth on the surface of the structural polymer layer.
10. The method of claim 1 , wherein providing the substrate includes providing a patterned conductive layer on the substrate prior to providing the structural polymer layer.
11. The method of claim 10 , wherein the substrate is transparent and forming the patterned inorganic thin film on the structural polymer layer comprises:
depositing a transparent inorganic thin film layer on the structural polymer layer;
depositing a photoresist over the transparent inorganic thin film layer;
exposing the photoresist through the substrate and the transparent inorganic thin film layer to transfer the pattern of the patterned conductive layer to the photoresist; and
etching the transparent inorganic thin film layer to form the patterned inorganic thin film.
12. The method of claim 1 , comprising using an atomic layer deposition process to form at least one of the conformal conductive gate layer, the conformal dielectric layer, and the conformal semiconductor layer.
13. The method of claim 12 , wherein using the atomic layer deposition process includes using a spatial atomic layer deposition process.
14. The method of claim 1 , comprising using a selective area deposition process to form the first electrode and the second electrode.
15. The method of claim 14 , wherein using the selective area deposition process includes using a polymeric inhibitor.
16. The method of claim 14 , wherein using the selective area deposition process includes using an atomic layer deposition process.
17. The method of claim 1 , wherein forming the structural polymer post having the inorganic material cap further includes forming another reentrant profile opposite the reentrant profile.
18. The method of claim 17 , further comprising:
depositing a filler material in the other reentrant profile.
19. The method of claim 17 , wherein forming the first electrode includes forming the first electrode to extend beyond the other reentrant profile.