VTFT including overlapping electrodes

1. A vertical transistor comprising:

a substrate;

an electrically conductive gate structure including a reentrant profile, the electrically conductive gate structure having a top surface;

a conformal electrically insulating layer that maintains the reentrant profile and is in contact with the electrically conductive gate structure and at least a portion of the substrate;

a conformal semiconductor layer that maintains the reentrant profile and is in contact with the conformal electrically insulating layer;

an electrode that extends into the reentrant profile and is in contact with a first portion of the semiconductor layer; and

another electrode that is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.

2. The transistor of claim 1 , wherein the electrically conductive gate structure includes an electrically insulating material.

3. The transistor of claim 1 , wherein the conformal electrically insulating layer includes a uniform thickness.

4. The transistor of claim 1 , wherein the conformal semiconductor layer includes a uniform thickness.

5. The transistor of claim 1 , wherein the electrodes have the same material composition.

6. The transistor of claim 5 , wherein the electrodes have the same thickness.

7. The transistor of claim 1 , wherein the substrate is flexible.

8. The transistor of claim 1 , wherein the electrically conductive gate structure includes a polymer post and an inorganic material cap on top of the polymer post.

9. The transistor of claim 1 , wherein the electrically conductive gate structure includes only conductive materials.

10. The transistor of claim 1 , wherein the electrodes have the same material composition and thickness.