VTFT with gate aligned to vertical structure

1. A thin film transistor comprising:

a substrate;

a post on the substrate, the post having a height dimension extending away from the substrate to a top portion of the post, the top portion of the post extending a distance beyond a bottom portion of the post in a direction parallel to the substrate to define a reentrant profile;

a conformal conductive gate layer on an edge of the post in the reentrant profile and not over the top portion of the post, the conformal conductive gate layer including a portion that extends along the substrate;

a conformal insulating layer on the gate layer in the reentrant profile;

a conformal semiconductor layer on the insulating layer in the reentrant profile;

a first electrode located in contact with a first portion of the semiconductor layer over the top portion of the post; and

a second electrode located in contact with a second portion of the semiconductor layer not over the top portion of the post.

2. The transistor of claim 1 , wherein the post is a structural polymer post.

3. The transistor of claim 2 , wherein the post comprises an epoxy resin or polyimide.

4. The transistor of claim 1 , wherein the post is a conductive material post.

5. The transistor of claim 4 , wherein the conductive material post is a metal post.

6. The transistor of claim 1 further comprising:

a conformal dielectric layer on the edges of the post, and at least a portion of the substrate, the conformal dielectric layer being located at least between the conformal conductive gate layer and the post.

7. The transistor of claim 1 , the post having another edge along the height dimension, the top portion of the post extending a distance beyond a bottom portion of the post in a direction parallel to the substrate to define a second reentrant profile, and further comprising:

a third electrode located in contact with a third portion of the semiconductor layer over the substrate and not over the post, and adjacent to the other edge in the second reentrant profile.

8. The transistor of claim 1 , wherein the first electrode and the second electrode are transparent conductive oxides.

9. The transistor of claim 1 , wherein the conformal conductive gate layer includes a portion that extends along the substrate beyond the distance that the top portion of the post extends beyond the bottom portion of the post.

10. The transistor of claim 1 , wherein the conformal conductive gate layer includes a portion that extends along the substrate but does not extend beyond the distance that the top portion of the post extends beyond the bottom portion of the post.

11. The transistor of claim 1 , wherein the conformal conductive gate layer includes a portion that extends along the substrate to the distance that the top portion of the post extends beyond the bottom portion of the post.

12. The transistor of claim 1 , wherein the second electrode located in contact with a second portion of the semiconductor layer not over the top portion of the post, is over a portion of conformal conductive gate layer that extends along the substrate.

13. The transistor of claim 1 , further comprising another conductive material layer positioned at least under a portion of the post and in electrical contact with the conformal conductive gate layer.

14. The transistor of claim 13 , wherein the conductive material layer and the top portion of the post are vertically aligned and have the same pattern within the area of the transistor.

15. The transistor of claim 1 , wherein the post includes a material that blocks more than 80% of light at wavelengths less than 400 nanometers.

16. The transistor of claim 1 , wherein the conformal conductive gate layer includes a material that blocks more than 80% of light at wavelengths less than 400 nanometers.