Supply voltage generating circuit and semiconductor device having the same
A supply voltage generating circuit includes a first charge pump circuit that generates a first internal supply voltage, and second charge pump circuit that generates a second internal supply voltage. The absolute value of the second internal supply voltage is greater than that of the first internal supply voltage. The output terminal of the first charge pump circuit is connected to a secondary-side charging terminal of the second charge pump circuit. The secondary-side is an output-side of the corresponding charge pump circuit, and the charging terminal is an auxiliary charging terminal that supplies an auxiliary charge to a secondary-side output terminal of the corresponding charge pump circuit. The output terminal of the second charge pump circuit outputs a voltage value that is the result of adding a prescribed voltage value to the value of the first internal supply voltage applied to the charging terminal.
1. A phase change memory device comprising:
a phase change memory cell array;
an external power supply terminal to receive an external voltage;
a first charge pump configured to boost the external voltage to a set voltage for programming the phase change memory cells to a crystalline state; and
a second charge pump configured to boost the set voltage to a reset voltage for programming the phase change memory cells to an amorphous state.
2. The phase change memory device as claimed in claim 1 wherein the second charge pump comprises a boost capacitor having an input side connected to the external voltage by a first clock signal and an output side connected to the set voltage by a second clock signal.
3. The phase change memory device as claimed in claim 1 wherein the second charge pump comprises a boost capacitor having an input side connected to the external voltage by a first clock signal and an output side connected to the external voltage by a second clock signal.
4. The phase change memory device as claimed in claim 1 wherein the phase change memory cells are configured to be programmed to a crystalline state by means of the set voltage being applied for a first time period, and the phase change memory cells are further configured to be programmed to an amorphous state by means of the reset voltage being applied for a second time period that is shorter than the first time period.
5. The phase change memory device as claimed in claim 1 wherein the phase change memory cells comprise Germanium-Antimony-Tellurium (GST) phase change elements.