Semiconductor device and process for producing the same
View Patent ↗A semiconductor device having a contact structure is provided. The semiconductor device includes: a conductive region; a first film and a second film which are formed over the conductive region to realize a layer; and a contact electrode which extends through the layer to the conductive region, and is formed so as to replace a portion of the layer with a portion of the contact electrode, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer.
1. A producing method of a semiconductor device, comprising:
forming a first transistor and a second transistor in a first well of a first conductive type and a second well of a second conductive type, respectively, the first well and the second well being formed in a semiconductor substrate, the first transistor and the second transistor including a gate electrode successively formed over the first well and the second well;
forming a first film and a second film over the first transistor and the second transistor, respectively, a boundary region between the first film and the second film being placed out of a boundary between the first well and the second well to the first well and placed over the first well of the first well and the second well;
forming a contact hole placed out of the boundary region between the first film and the second film to the second film and extending to the gate electrode through the second film of the first film and the second film; and
forming a contact electrode in the contact hole.
2. The producing method according to claim 1 , wherein,
the forming of the first film and the second film includes
forming the first film over the first transistor and the second transistor,
forming an etching stopper film on the first film,
removing a first part of the etching stopper film on a first part of the first film and the first part of the first film by etching so as to leave a second part of the etching stopper film and a second part of the first film,
forming the second film over a structure after removing the first part of the etching stopper film and the first part of the first film, and
removing a first part of the second film formed over the second part of the etching stopper film by etching so as to leave a second part of the second film.
3. The producing method according to claim 1 , wherein the contact hole is placed out of the boundary between the first well and the second well to the second well and is placed over the second well of the first well and the second well.