Analog tunneling current sensors for use with disk drive storage devices
Amplifier architectures are provided for current sensing applications. An amplifier includes a load device, an operational amplifier, a current source, and a bipolar transistor. The operational amplifier has a first input terminal connected to a first input node that receives an input current, and a second input terminal connected to a second input node that receives a reference voltage. The current source is connected to an output of the operational amplifier. The operational amplifier, the current source, and the bipolar transistor form a feedback loop that generates and maintains a bias voltage on the first input node based on the reference voltage applied to the second input node. The bipolar transistor amplifies the input current received on the first input node, and generates an amplified input current. The load device converts the amplified input current to an output voltage, wherein the output voltage is used to sense the input current.
1. An amplifier circuit, comprising:
a first node configured to receive a first current;
a second node configured to receive a reference voltage;
feedback circuitry configured to form a feedback loop that generates and maintains a bias voltage on the first node based on the reference voltage at the second node,
wherein the feedback circuitry comprises a bipolar transistor having a base terminal connected to the first node, and wherein the bipolar transistor is configured to amplify the first current so as to provide a second current;
a reference circuit configured to generate a scaled version of the second current; and
a comparing circuit configured to compare an output voltage with an output reference voltage to detect when the first current is at a predetermined level,
wherein the output voltage is generated based on the second current, and wherein the output reference voltage is generated based on the scaled version of the second current.
2. The amplifier circuit of claim 1 , wherein the feedback circuitry further comprises an operational amplifier and a current source, wherein the operational amplifier comprises first and second input terminals connected to the first and second nodes, respectively, and wherein the current source is connected to an output terminal of the operational amplifier.
3. The amplifier circuit of claim 2 , wherein the current source comprises a field effect transistor having a gate terminal connected to the output terminal of the operational amplifier.
4. The amplifier circuit of claim 2 , further comprising a resistive element connected between the bipolar transistor and the current source.
5. The amplifier circuit of claim 1 , further comprising a sensor element connected to the first node of the amplifier circuit, wherein the sensor element is configured to generate the first current.
6. The amplifier circuit of claim 5 , wherein the sensor element is an element on a read/write head of a storage device.
7. The amplifier circuit of claim 1 , further comprising:
wherein the reference circuit is further configured to generate an output current based on the scaled version of the second current, wherein the output current is a scaled version of the first current; and
a comparing circuit configured to compare the output current with a reference current to detect when the first current is at a predetermined level.
8. A storage system, comprising:
a storage medium;
a read/write head configured to read and write data to and from the storage medium, wherein the read/write head comprises a sensor element configured to generate a first current as the read/write head approaches a surface of the storage medium; and
current sensor circuitry configured to process the first current to detect when the read/write head is positioned at a predefined distance from the surface of the storage medium based on a predetermined level of the first current,
wherein the current sensor circuitry comprises an amplifier circuit, wherein the amplifier circuit comprises:
a first node to receive the first current;
a second node to receive a reference voltage; and
feedback circuitry configured to form a feedback loop that generates and maintains a bias voltage on the first node based on the reference voltage at the second node,
wherein the feedback circuitry comprises a bipolar transistor having a base terminal connected to the first node, and wherein the bipolar transistor is configured to amplify the first current so as to provide a second current;
a reference circuit configured to generate a scaled version of the second current and generate an output current based on the scaled version of the second current, wherein the output current is a scaled version of the first current; and
a comparing circuit configured to compare the output current with a reference current to detect when the first current is at said predetermined level.
9. The storage system of claim 8 , wherein the feedback circuitry further comprises an operational amplifier and a current source, wherein the operational amplifier comprises first and second input terminals connected to the first and second nodes, respectively, and wherein the current source is connected to an output terminal of the operational amplifier.
10. The storage system of claim 9 , wherein the current source comprises a field effect transistor having a gate terminal connected to the output terminal of the operational amplifier.
11. The storage system of claim 9 , wherein the amplifier circuit further comprises a resistive element connected between the bipolar transistor and the current source.
12. The storage system of claim 8 , wherein the current sensor circuitry further comprises:
a comparing circuit configured to compare an output voltage with an output reference voltage to detect when the first current is at said predetermined level,
wherein the output voltage is generated based on the second current, and wherein the output reference voltage is generated based on the scaled version of the second current.
13. A virtual storage system comprising the storage system of claim 8 .
14. The storage system of claim 8 , further comprising a sensor element connected to the first node of the amplifier circuit, wherein the sensor element is configured to generate the first current.
15. The storage system of claim 14 , wherein the sensor element is an element on a read/write head of a storage device.
16. A method, comprising:
receiving a first current at a first node;
receiving a reference voltage at a second node;
generating and maintaining a bias voltage on the first node, based on the reference voltage at the second node, using a feedback loop from the second node to the first node, wherein the feedback loop comprises a bipolar transistor having a base terminal connected to the first node, and wherein the bipolar transistor is configured to amplify the first current so as to provide a second current;
generating a scaled version of the second current; generating an output current based on the scaled version of the second current, wherein the output current is a scaled version of the first current; and
comparing the output current with a reference current to detect when the first current is at a predetermined level.
17. The method of claim 16 , wherein the first current is generated by a sensor element connected to the first node.
18. The method of claim 17 , wherein the sensor element is an element on a read/write head of a storage device.
19. The method of claim 16 , further comprising:
generating an output voltage based on the second current;
generating an output reference voltage based on the scaled version of the second current; and
comparing the output voltage with the output reference voltage to detect when the first current is at a predetermined level.