Semiconductor device and stacked semiconductor device
A semiconductor device includes a package substrate, and a stack of semiconductor chips over the package substrate, each of the semiconductor chips including first and second surfaces, each of the semiconductor chips including a first through electrode that extends through each of the semiconductor chips, a first surface electrode positioned on the first surface of each of the semiconductor chips, the first surface electrode being coupled to a first end of the first through electrode, a second surface electrode positioned on the second surface of each of the semiconductor chips, the second surface electrode being coupled to a second end of the first through electrode, a second through electrode that extends through each of the semiconductor chips, the second through electrode having third and fourth ends, and a third surface electrode positioned on the second surface of the first semiconductor chip.
1. A semiconductor device comprising:
a package substrate; and
a stack of semiconductor chips over the package substrate, each of the semiconductor chips including first and second surfaces, each of the semiconductor chips comprising:
a first through electrode that extends through each of the semiconductor chips;
a first surface electrode positioned on the first surface of each of the semiconductor chips, the first surface electrode being coupled to a first end of the first through electrode;
a second surface electrode positioned on the second surface of each of the semiconductor chips, the second surface electrode being coupled to a second end of the first through electrode;
a second through electrode that extends through each of the semiconductor chips, the second through electrode having third and fourth ends; and
a third surface electrode positioned on the second surface of each of the semiconductor chips, the third surface electrode coupled to the fourth end of the second through electrode,
wherein the first through electrode of the semiconductor chips included in the stack are electrically connected to each other via the first and second surface electrodes, and the second through electrode of the semiconductor chips included in the stack are electrically separated from each other.
2. The semiconductor device according to claim 1 , wherein each of the semiconductor chips further comprises:
an insulator that covers the third end of the second through electrode.
3. The semiconductor device according to claim 1 , wherein each of the semiconductor chips further comprises:
an insulating film which covers the first surface of the first semiconductor chip, the insulating film including a first opening through which the first surface electrode is coupled to the first end of the first through electrode, the insulating film covering the third end of the second through electrode.
4. The semiconductor device according to claim 1 , wherein each of the semiconductor chips comprises:
a semiconductor substrate;
a multilevel interconnect structure over the semiconductor substrate; and
an insulating film over the multilevel interconnect structure,
wherein the first through electrode comprises first and second portions, the first portion penetrating the semiconductor substrate, and the second portion including a fifth end which is connected to the first portion and a sixth end which is connected to the first surface electrode, and the second portion extending through the multilevel interconnect structure, and
wherein the second through electrode comprises third and fourth portions, the third portion penetrating the semiconductor substrate, and the fourth portion including a seventh end which is connected to the third portion and an eighth end which is covered with the insulating film, and the fourth portion extending through the multilevel interconnect structure.
5. The semiconductor device according to claim 4 , wherein the first and third portions comprise copper, and
the second and fourth portions are made of a conductor which is different from Copper.
6. The semiconductor device according to claim 1 , wherein the third surface electrode is used for probe test and is greater in surface area than the second surface electrode.
7. The semiconductor device according to claim 1 , wherein each of the semiconductor chips includes a normal operation mode and a test mode, and each of the semiconductor chips is configured to transfer signals through the second through electrode in the test mode, and each of the first semiconductor chips is configured not to transfer signals through the second through electrode in the normal operation mode.
8. The semiconductor device according to claim 7 , wherein each of the semiconductor chips further comprises:
a test circuit electrically coupled to the second through electrode.
9. The semiconductor device according to claim 7 , wherein the first and the second surface electrodes are not used for making contact with a probe needle of a test apparatus in the test mode.
10. A semiconductor device comprising:
a package substrate and
a stack of semiconductor chips over the package substrate, each of the semiconductor chips including first and second surfaces, each of the semiconductor chips comprising:
a first through electrode that extends through each of the semiconductor chips;
a first surface electrode positioned on the first surface of each of the semiconductor chips, the first surface electrode being coupled to a first end of the first through electrode;
a second surface electrode positioned on the second surface of each of the semiconductor chips, the second surface electrode being coupled to a second end of the first through electrode; and
a second through electrode that extends through each of the semiconductor chips,
wherein the first through electrodes of the semiconductor chips included in the stack are electrically connected to each other via the first and second surface electrodes, and the second through electrodes of the semiconductor chips included in the stack are electrically separated from each other.
11. The semiconductor device according to claim 10 , wherein the second through electrode include a third end and a fourth end, and wherein the fourth end is coupled to a third surface electrode positioned on the second surface of each of the semiconductor chips.
12. The semiconductor device according to claim 11 , wherein each of the semiconductor chips further comprises:
an insulator that covers the third end of the second through electrode.
13. The semiconductor device according to claim 11 , wherein each of the semiconductor chips further comprises:
an insulating film which covers the first surface of each of the semiconductor chips, the insulating film including a first opening through which the first surface electrode is coupled to the first end of the first through electrode, the insulating film covering the third end of the second through electrode.
14. The semiconductor device according to claim 10 , wherein each of the semiconductor chips comprises:
a semiconductor substrate;
a multilevel interconnect structure over the semiconductor substrate; and
an insulating film over the multilevel interconnect structure.
15. The semiconductor device according to claim 14 , wherein the first through electrode comprises first and second portions, the first portion penetrating the semiconductor substrate, and the second portion including a fifth end which is connected to the first portion and a sixth end which is connected to the first surface electrode, and the second portion extending through the multilevel interconnect structure, and
wherein the first portion comprises a first material different from a second material from the second portion.
16. The semiconductor device according to claim 14 , wherein the second through electrode comprises third and fourth portions, the third portion penetrating the semiconductor substrate, and the fourth portion including a seventh end which is connected to the third portion and an eighth end which is covered with the insulating film, and the fourth portion extending through the multilevel interconnect structure, and
wherein the third portion comprises a first material different from a second material from the fourth portion.
17. The semiconductor device according to claim 11 , wherein the third surface electrode is used for probe test and is greater in surface area than the second surface electrode.
18. The semiconductor device according to claim 10 , wherein each of the semiconductor chips includes a normal operation mode and a test mode, and each of the semiconductor chips is configured to transfer signals through the second through electrode in the test mode, and each of the first semiconductor chips is configured not to transfer signals through the second through electrode in the normal operation mode.
19. The semiconductor device according to claim 18 , wherein the first and the second surface electrodes are not used for making contact with a probe needle of a test apparatus in the test mode.
20. The semiconductor device according to claim 10 , wherein each of the semiconductor chips further comprises:
a test circuit electrically coupled to the second through electrode.