Solid state detection devices, methods of making and methods of using

1. A method of making a solid state device for detecting neutrons comprising:

providing a bulk semiconductor substrate;

electrochemically processing the substrate in an organic bath for a predetermined time period to form pores in the substrate; and

filling the pores in a liquid phase using a sol-gel technique with a fill material that reacts with neutrons,

wherein the pores and the fill material have varying depths in the substrate.

2. The method of claim 1 , further comprising:

doping a surface of the pores via gaseous diffusion with a p- or n-type impurity prior to the filling step.

3. The method of claim 2 , wherein the p- or n-type impurity is selected from a Group III or a Group V element.

4. The method of claim 1 , wherein the organic bath includes about a 20% or greater HF solution.

5. The method of claim 1 , wherein the predetermined time period for processing ranges from about 15 to 45 minutes.

6. The method of claim 1 , wherein the substrate is selected from Silicon, Geranium, Gallium, Arsenide and combinations thereof.

7. The method of claim 1 , wherein the fill material is trimethyl borate.

8. The method of claim 1 , wherein the step of electrochemical processing operates at a current density ranging from about 1 to 2 mA/cm 2 .

9. A solid state neutron detection device comprising:

a semiconductor substrate having pores;

a p- or n-type doping layer formed on a surface of the substrate pores; and

a layer of fill material formed on the p- or n-type doping layer in a liquid phase using a sol-gel technique,

wherein a neutron detection efficiency of the device, based upon a ratio of charged particles received at the surface of the substrate pores originating from neutron particles incident on the layer of fill material and transmitted therethrough, is greater than about 40%,

wherein the pores and the fill material have varying depths in the substrate.

10. The device of claim 9 , wherein the height of the pores is about 10-50 microns.

11. The device of claim 10 , wherein the height of the pores is about 20-40 microns.

12. The device of claim 9 , wherein the diameter of the pores is about 0.1-2 microns.

13. The device of claim 9 , wherein the pore density of the substrate is about 1-10 pores per square micron.

14. The device of claim 9 , wherein the thickness of the doping layer is about 0.05-0.5 microns.

15. The device of claim 9 , wherein the substrate is selected from Silicon, Geranium, Gallium, Arsenide and combinations thereof.

16. The device of claim 9 , wherein the fill is trimethyl borate, Gadolinium, Lithium and combinations thereof.

17. The device of claim 9 , wherein the donor impurity is selected from a Group III or V element.

18. A method of detecting efficiency of a solid state detector device comprising:

providing the solid state detector device including a porous substrate with a p- or n-type doping layer formed on a surface of the substrate pores and a layer of fill material formed on a surface of the p- or n-type doping layer in a liquid phase using a sol-gel technique;

receiving neutron particles from a beam at the layer of fill material;

reacting the received neutron particles and ions of the layer of fill material; and

measuring a detection efficiency based upon a fraction of charged particles at the surface of the substrate pores originating from the neutron particles received at the layer of fill material,

wherein the pores and the fill material have varying depths in the substrate.

19. The method of claim 18 , wherein the detection efficiency is greater than about 40%.

20. The method of claim 19 , wherein the detection efficiency is less than about 70%.