Switch and semiconductor device including the switch
A device for use with non-volatile memory, includes a first transistor of a first channel type coupled between first and second nodes, including a control gate supplied with a first control signal having a first phase, a second transistor of a second channel type different from the first channel type including a first terminal coupled to the first node, a second terminal coupled to a third node, a back gate coupled to the first terminal thereof, and a control gate supplied with a second control signal having a second phase substantially opposite to the first phase, a third transistor of the second channel type including a first terminal coupled to the second node, a second terminal coupled to the third node, a back gate coupled to the first terminal thereof, and a control gate supplied with the second control signal, and a protection circuit coupled between the first and second node.
1. A device for use with non-volatile memory, the device comprising:
a first transistor of a first channel type coupled between first and second nodes, including a control gate supplied with a first control signal having a first phase;
a second transistor of a second channel type different from the first channel type including a first terminal coupled to the first node, a second terminal coupled to a third node, a back gate connected to the first terminal thereof, and a control gate supplied with a second control signal having a second phase substantially opposite to the first phase;
a third transistor of the second channel type including a first terminal coupled to the second node, a second terminal coupled to the third node, a back gate connected to the first terminal thereof, and a control gate supplied with the second control signal; and
a protection circuit coupled between the first and second node so that the protection circuit, the second transistor and the third transistor are connected in series, the protection circuit being supplied with the first control signal.
2. The device as claimed in claim 1 , further comprising:
an elevator circuit configured to shift a voltage level of an input signal to produce the first control signal.
3. The device as claimed in claim 2 , further comprising:
an inverter configured to receive the input signal to produce the second control signal.
4. The device as claimed in claim 1 , wherein the protection circuit comprises:
a fourth transistor of the first channel type coupled between the first node and the first terminal of the second transistor; and
a fifth transistor of the first channel type coupled between the second node and the first terminal of the third transistor,
wherein the first transistor including a first threshold voltage, and
wherein the fourth and fifth transistors each includes a second threshold voltage lower than the first threshold voltage.
5. The device as claimed in claim 4 , further comprising:
a non-volatile memory array coupled to the second node.
6. The device as claimed in claim 1 , wherein the back gate of the second transistor is constantly connected to the first terminal thereof, and the back gate of the third transistor is constantly connected to the second terminal thereof.
7. A device for use with non-volatile memory, the device comprising:
a first transistor of a first channel type coupled between first and second nodes, including a control gate supplied with a first control signal having a first phase;
a second transistor of a second channel type different from the first channel type including a first terminal coupled to the first node, a second terminal coupled to a third node, a back gate coupled to the first terminal thereof, and a control gate supplied with a second control signal having a second phase substantially opposite to the first phase;
a third transistor of the second channel type including a first terminal coupled to the second node, a second terminal coupled to the third node, a back gate coupled to the first terminal thereof, and a control gate supplied with the second control signal; and
a protection circuit coupled between the first and second node so that the protection circuit, the second transistor and the third transistor are connected in series, the protection circuit being supplied with the first control signal, wherein the protection circuit comprises:
a fourth transistor of the first channel type coupled between the first node and the first terminal of the second transistor; and
a fifth transistor of the first channel type coupled between the second node and the first terminal of the third transistor,
wherein the first transistor including a first threshold voltage, and
wherein the fourth and fifth transistors each includes a second threshold voltage lower than the first threshold voltage.
8. The device as claimed in claim 7 , further comprising:
an elevator circuit configured to shift a voltage level of an input signal to produce the first control signal.
9. The device as claimed in claim 7 , further comprising:
an inverter configured to receive the input signal to produce the second control signal.