IMPLEMENTING ENHANCED PHASE CHANGE MEMORY (PCM) READ LATENCY THROUGH CODING
A method, apparatus, and storage device are provided for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency through coding. A coding algorithm is used to write data to the PCM including a redundancy chip enabling recovery of inaccessible partition data by reading other partitions. A read operation is served by reading parity lines and computing data for the read operation from a blocked written-to partition.
1 . A method for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) comprising:
providing the PCM including a redundancy chip;
using a coding algorithm to write data to the PCM including the redundancy chip enabling recovering inaccessible partition data by reading other partitions; and
serving a read operation from an otherwise blocked written-to partition by reading parity lines from other partitions and computing data for the read operation.
2 . The method for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 1 wherein using the coding algorithm to write data to the PCM including the redundancy chip includes providing the coding algorithm to write data with any two parity lines sharing at most one partition across each of a plurality of chips of the phase-change-memory (PCM).
3 . The method for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 1 wherein using the coding algorithm to write data to the PCM including the redundancy chip includes providing the coding algorithm for enabling an exclusive OR (XOR) encoding and decoding calculation for recovering inaccessible partition data.
4 . The method for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 1 includes providing the coding algorithm to maintain coded exclusive OR (XOR) data.
5 . The method for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 1 wherein using the coding algorithm to write data to the PCM includes the redundancy chip maintaining coded exclusive OR (XOR) data.
6 . The method for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 1 wherein using the coding algorithm to write data reduces a collision probability of read and write operations.
7 . The method for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 1 wherein using the coding algorithm to write data reduces read and write latency on PCM multiple partitioned chips.
8 . An apparatus for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) comprising:
a controller;
said controller using a coding algorithm to write data to the PCM including a redundancy chip enabling recovering inaccessible partition data by reading other partitions; and
said controller serving a read operation from an otherwise blocked written-to partition by reading parity lines from other partitions and computing data for the read operation.
9 . The apparatus for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 8 includes control code stored on a non-transitory computer readable medium, and wherein said controller uses said control code for implementing enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM).
10 . The apparatus for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 8 wherein said controller using the coding algorithm for write data provides any two parity lines sharing at most one partition across a plurality of chips of the phase-change-memory (PCM).
11 . The apparatus for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 8 wherein said controller using the coding algorithm to write data to the PCM including the redundancy chip includes said controller providing the coding algorithm for enabling an exclusive OR (XOR) encoding and decoding calculation for recovering inaccessible partition data.
12 . The apparatus for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 8 includes said controller providing the coding algorithm to maintain coded exclusive OR (XOR) data.
13 . The apparatus for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 8 wherein said controller using the coding algorithm to write data reduces a collision probability of read and write operations.
14 . The apparatus for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM) as recited in claim 8 wherein said controller using the coding algorithm to write data reduces read and write latency on PCM multiple partitioned chips.
15 . A data storage device comprising:
a phase-change-memory (PCM) including a redundancy chip;
a controller for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to the phase-change-memory (PCM);
said controller using a coding algorithm to write data to the PCM including the redundancy chip enabling recovering inaccessible partition data by reading other partitions; and
said controller serving a read operation from an otherwise blocked written-to partition by reading parity lines from other partitions and computing data for the read operation.
16 . The data storage device as recited in claim 15 , includes control code stored on a non-transitory computer readable medium, and wherein said controller uses said control code for implementing enhanced performance with enhanced phase-change-memory (PCM) read latency to phase-change-memory (PCM).
17 . The data storage device as recited in claim 15 , wherein said controller using the coding algorithm for write data provides any two parity lines sharing at most one partition across a plurality of chips of the phase-change-memory (PCM).
18 . The data storage device as recited in claim 15 , wherein said controller using the coding algorithm to write data to the PCM including the redundancy chip includes said controller providing the coding algorithm for enabling an exclusive OR (XOR) encoding and decoding calculation for recovering inaccessible partition data.
19 . The data storage device as recited in claim 15 , wherein said controller using the coding algorithm to write data reduces a collision probability of read and write operations on PCM multiple partitioned chips.
20 . The data storage device as recited in claim 15 , wherein said controller using the coding algorithm to write data reduces read and write latency on PCM multiple partitioned chips.