Semiconductor device enabling refreshing of redundant memory cell instead of defective memory cell
A semiconductor device includes memory blocks MB 1 and MB 2 and redundancy determination circuit 25 that can enter a normal operation mode that accesses either memory block MB 1 or memory block MB 2 and a refresh mode that simultaneously accesses both memory block MB 1 and memory block MB 2 . In response to normal memory cell NMC that belongs to at least one of memory blocks MB 1 and MB 2 being replaced by redundant memory cell RMC in the refresh mode, redundancy determination circuit 25 deactivates normal cell area NCA to which normal memory cell NMC that is a source of replacement belongs, and activates redundant cell area RCA to which redundant memory cell RMC that is to be replaced belongs and normal cell area NCA to which normal memory cell NMC that is not being replaced belongs.
1. A method for accessing a dynamic random access memory having two memory blocks each comprising a normal cell area and a redundant cell area, comprising:
receiving a normal operation command including a first row address;
activating, if the first row address corresponds to a redundant address, a first redundant wordline in the redundant cell area of a first block among the two memory blocks determined by a first bit in the first row address while not activating the normal cell area of the first block, not activating the redundant cell area of a second block among the two memory blocks, and not activating the normal cell area of the second block;
activating, if the first row address does not correspond to the redundant address, a first normal wordline corresponding to a portion of the first row address in the normal cell area of the first block while not activating the redundant cell area of the first block, not activating the redundant cell area of the second block, and not activating the normal cell area of the second block;
receiving a refresh operation command including a second row address;
activating, if the second row address corresponds to the redundant address, the first redundant wordline and a second normal wordline corresponding to a portion of the second row address in the normal cell area of the second block while not activating the normal cell area of the first block and not activating the redundant cell area of the second block; and
activating, if the second row address does not correspond to the redundant address, the second normal wordline and a third normal wordline corresponding to the portion of the second row address in the normal cell area of the first block while not activating the redundant cell area of the first block, and not activating the redundant cell area of the second block.
2. The method as claimed in claim 1 , wherein the normal operation command is a selected one of a read operation command and a write operation command.
3. The method as claimed in claim 1 , wherein the redundant address is stored in a redundancy determination circuit.
4. The method as claimed in claim 3 , wherein the redundancy determination circuit comprises fuses.
5. The method as claimed in claim 1 , wherein the refresh command is a selected one of an auto-refresh command and a self-refresh command.
6. The method as claimed in claim 1 , wherein the first bit in the first row address comprises the most significant bit of the first row address.
7. The method as claimed in claim 1 , wherein the portion of the first row address comprises the least significant bits of the first row address and the portion of the second row address comprises the least significant bits of the second row address.
8. The method as claimed in claim 1 , wherein the portion of the first row address is equal to the portion of the second row address and the first normal wordline is the same as the third normal wordline.
9. A method for accessing a dynamic random access memory having two memory blocks each comprising a normal cell area and a redundant cell area, comprising:
receiving a normal operation command including a first row address;
activating, if the first row address corresponds to a redundant address, a first redundant wordline in the redundant cell area of a first block among the two memory blocks determined by a first bit in the first row address while not activating the normal cell area of the first block, not activating the redundant cell area of a second block among the two memory blocks, and not activating the normal cell area of the second block;
activating, if the first row address does not correspond to the redundant address, a first normal wordline corresponding to a portion of the first row address in the normal cell area of the second block while not activating the redundant cell area of the first block, not activating the redundant cell area of the second block, and not activating the normal cell area of the first block;
receiving a refresh operation command including a second row address;
activating, if the second row address corresponds to the redundant address, the first redundant wordline and a second normal wordline corresponding to a portion of the second row address in the normal cell area of the first block while not activating the normal cell area of the second block and not activating the redundant cell area of the second block; and
activating, if the second row address does not correspond to the redundant address, the second normal wordline and a third normal wordline corresponding to the portion of the second row address in the normal cell area of the second block while not activating the redundant cell area of the first block, and not activating the redundant cell area of the second block.