Semiconductor device with pads of enhanced moisture blocking ability
A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric capacitors formed in the lamination of insulator; wiring structure formed in the lamination of insulator and connected to the semiconductor elements and the ferro-electric capacitors; pad electrodes connected to the wiring structure, formed in the lamination of insulator and exposed in the openings of the passivation film; a conductive pad protection film, including a Pd film, covering each pad electrode via the opening of the passivation film, and extending on the passivation film; and stud bump or bonding wire connected to the pad electrode via the conductive pad protection film.
1. A semiconductor device comprising:
a semiconductor substrate;
a circuit portion including a plurality of semiconductor elements formed on said semiconductor substrate;
lamination of insulator covering said circuit portion, formed on said semiconductor substrate and including a passivation film as an uppermost layer having an opening;
a ferro-electric capacitor formed in said lamination of insulator;
a wiring structure formed in said lamination of insulator and connected to said semiconductor elements and said ferro-electric capacitor;
a pad electrode structure connected to said wiring structure, formed in said lamination of insulator and exposed in the opening of said passivation film;
a conductive pad protection film including a Pd film, covering said pad electrode structure via the opening of said passivation film, and extending on said passivation film; and
a conductive capacitor protection film made of a same film as said conductive pad protection film and extending on said passivation film in an area including an area above said ferro-electric capacitor in a state electrically separated from said conductive pad protection film.
2. The semiconductor device according to claim 1 , wherein said conductive capacitor protection film is electrically separated from said conductive pad protection film by a slit.
3. The semiconductor device according to claim 1 , wherein said pad electrode structure has an uppermost surface of aluminum or aluminum alloy, and said uppermost surface has a flaw formed by needle abutment.
4. The semiconductor device according to claim 3 , wherein said conductive pad protection film covers a surface of said flaw.
5. The semiconductor device according to claim 4 , wherein said conductive pad protection film includes a Ti film contacting said uppermost surface of aluminum or aluminum alloy.
6. The semiconductor device according to claim 5 , wherein said conductive pad protection film includes a TiN film or a Ti—Al—N film between said Pd film and said Ti film.
7. The semiconductor device according to claim 1 , further comprising a plated bump formed on said conductive pad protection film.
8. The semiconductor device according to claim 7 , wherein said plated bump is made of gold.
9. The semiconductor device according to claim 7 , wherein said pad electrode structure has an uppermost surface of aluminum or aluminum alloy, and said uppermost surface has a flaw formed by needle abutment.
10. The semiconductor device according to claim 7 , wherein said conducive pad protection film covers the surface of said flaw.
11. The semiconductor device according to claim 10 , wherein said conductive pad protection film includes a Ti film contacting said uppermost surface of aluminum or aluminum alloy.