Low Bs spin-polarizer for spin torque oscillator

1. A magnetic head, comprising:

a main magnetic pole configured to generate a writing magnetic field when current is applied to a write coil; and

a spin torque oscillator (STO) located adjacent the main magnetic pole, the STO being configured to generate a high frequency magnetic field when current is applied thereto, wherein the high frequency magnetic field is generated simultaneously to the writing magnetic field,

wherein the STO comprises:

a spin polarization layer (SPL);

a field generation layer (FGL) positioned adjacent the SPL; and

one or more interlayers positioned between the SPL and the FGL, and

wherein a magnetization easy axis of the SPL is positioned in an in-plane direction such that the SPL has no perpendicular magnetic anisotropy.

2. The magnetic head as recited in claim 1 , further comprising a trailing shield positioned on a SPL-side of the STO, the trailing shield being configured to act as a return electrode, wherein the STO is positioned at a media-facing surface adjacent to the main magnetic pole between the main magnetic pole and the trailing shield.

3. The magnetic head as recited in claim 1 , further comprising a trailing shield positioned on a FGL-side of the STO, the trailing shield being configured to act as a return electrode, wherein the STO is positioned at a media-facing surface adjacent to the main magnetic pole between the main magnetic pole and the trailing shield.

4. The magnetic head as recited in claim 1 , wherein a saturation magnetic flux density of the SPL (Bs_SPL) multiplied by a thickness of the SPL (t_SPL) is less than a saturation magnetic flux density of the FGL (Bs_FGL) multiplied by a thickness of the FGL (t_FGL).

5. The magnetic head as recited in claim 1 , wherein the SPL comprises at least one of Ni, Fe, and Co, and wherein a product of a saturation magnetic flux density of the SPL (Bs_SPL) and a thickness of the SPL (t_SPL) is no greater than about 10 nmT.

6. The magnetic head as recited in claim 5 , wherein the SPL further comprises a nonmagnetic material (X) selected from a group consisting of: Cu, Ge, Si, and B, and wherein Bs_SPL*t_SPL≦5 nmT.

7. The magnetic head as recited in claim 6 , wherein when the SPL comprises NiX, the nonmagnetic material constitutes from about 0.1 at % to about 50 at % of the NiX.

8. The magnetic head as recited in claim 6 , wherein when the SPL comprises CoFeX, the nonmagnetic material constitutes from about 20 at % to about 80 at % of the CoFeX.

9. The magnetic head as recited in claim 1 , wherein a thickness of the SPL is in a range from about 0.5 nm to about 10 nm.

10. The magnetic head as recited in claim 1 , wherein current is flowed through the STO in a direction from the FGL to the SPL.

11. A magnetic data storage system, comprising:

at least one magnetic head as recited in claim 1 ;

a magnetic recording medium;

a drive mechanism for passing the magnetic recording medium over the at least one magnetic head; and

a controller electrically coupled to the at least one magnetic head for controlling operation of the at least one magnetic head.

12. A method for producing a magnetic head, the method comprising:

forming a main magnetic pole at a media-facing surface;

forming a spin torque oscillator (STO) above the main magnetic pole, the STO comprising:

a field generation layer (FGL) formed above the main magnetic pole;

a spin polarization layer (SPL) formed above the FGL; and

one or more interlayers formed between the SPL and the FGL,

wherein a magnetization easy axis of the SPL is positioned in an in-plane direction such that the SPL has no perpendicular magnetic anisotropy, and

wherein a saturation magnetic flux density of the SPL (Bs_SPL) multiplied by a thickness of the SPL (t_SPL) is less than a saturation magnetic flux density of the FGL (Bs_FGL) multiplied by a thickness of the FGL (t_FGL), such that Bs_SPL*t_SPL<Bs_FGL*t_FGL.

13. The method as recited in claim 12 , further comprising forming a trailing shield above the SPL, the trailing shield being configured to act as a return electrode.

14. The method as recited in claim 12 , wherein the SPL comprises at least one of Ni, Fe, and Co, and wherein Bs_SPL*t_SPL≦10 nmT.

15. The method as recited in claim 14 , wherein the SPL further comprises a nonmagnetic material (X) selected from a group consisting of: Cu, Ge, Si, and B, and wherein Bs_SPL*t_SPL≦5 nmT.

16. The method as recited in claim 15 , wherein when the SPL comprises NiX, the nonmagnetic material constitutes from about 0.1 at % to about 50 at % of the NiX.

17. The method as recited in claim 15 , wherein when the SPL comprises CoFeX, the nonmagnetic material constitutes from about 20 at % to about 80 at % of the CoFeX.

18. A spin torque oscillator (STO), comprising:

a spin polarization layer (SPL);

a field generation layer (FGL) positioned adjacent the SPL; and

one or more interlayers positioned between the SPL and the FGL,

wherein a magnetization easy axis of the SPL is positioned in an in-plane direction such that the SPL has no perpendicular magnetic anisotropy, and wherein a saturation magnetic flux density of the SPL (Bs_SPL) multiplied by a thickness of the SPL (t_SPL) is less than a saturation magnetic flux density of the FGL (Bs_FGL) multiplied by a thickness of the FGL (t_FGL).

19. The STO as recited in claim 18 , wherein the SPL comprises at least one of Ni, Fe, and Co, and wherein Bs_SPL*t_SPL≦10 nmT.

20. The STO as recited in claim 19 , wherein the SPL further comprises a nonmagnetic material (X) selected from a group consisting of: Cu, Ge, Si, and B, and wherein Bs_SPL*t_SPL≦5 nmT, wherein when the SPL comprises NiX, the nonmagnetic material constitutes from about 0.1 at % to about 50 at % of the NiX, and wherein when the SPL comprises CoFeX, the nonmagnetic material constitutes from about 20 at % to about 80 at % of the CoFeX.