Method for producing image pickup apparatus and method for producing semiconductor apparatus
A method for producing an image pickup apparatus includes processes of: cutting an image pickup chip substrate to fabricate a plurality of image pickup chips; bonding the image pickup chips to a glass wafer via a transparent adhesive layer as well as bonding dummy chips to an outer peripheral region of the glass wafer where the image pickup chips are not bonded to fabricate a joined wafer; filling a sealing member between the image pickup chips and the dummy chips; machining the joined wafer to thin a thickness; and cutting the joined wafer.
1. A method for producing an image pickup apparatus, the method comprising processes of:
cutting an image pickup chip substrate where a plurality of light receiving sections are formed on a first main face and electrode pads are formed around each light receiving section to fabricate a plurality of image pickup chips;
bonding the first main face of each of the image pickup chips to a transparent support substrate via a transparent adhesive layer as well as bonding dummy chips to an outer peripheral region of the support substrate where the image pickup chips are not bonded, via the adhesive layer to fabricate a joined wafer;
filling a sealing member between the image pickup chips and the dummy chips that are bonded to the joined wafer;
machining the joined wafer from a second main face side to thin a thickness;
forming a plurality of external connection electrodes, each of which is connected to each of the electrode pads via each of a plurality of through-hole interconnections, on the second main face; and
cutting the joined wafer.
2. The method for producing an image pickup apparatus according to claim 1 , wherein image pickup chips determined as non-defective products in an inspection are bonded to the support substrate.
3. A method for producing a semiconductor apparatus, the method comprising processes of:
cutting a semiconductor chip substrate where a plurality of semiconductor circuit sections are formed on a first main face and electrode pads are formed around each semiconductor circuit section to fabricate a plurality of semiconductor chips;
bonding the first main face of each of the semiconductor chips to a support substrate via an adhesive layer as well as bonding dummy chips to an outer peripheral region of the support substrate where the semiconductor chips are not bonded, via the adhesive layer to fabricate a joined wafer;
filling a sealing member between the semiconductor chips and the dummy chips that are bonded to the joined wafer;
machining the joined wafer from a second main face side to thin a thickness;
forming a plurality of external connection electrodes, each of which is connected to each of the electrode pads via each of a plurality of through-hole interconnections, on the second main face; and
cutting the joined wafer.
4. The method for producing a semiconductor apparatus according to claim 3 , wherein semiconductor chips determined as non-defective products in an inspection are bonded to the support substrate.
5. The method for producing a semiconductor apparatus according to claim 4 , wherein the process of thinning the thickness comprises a CMP process.
6. The method for producing a semiconductor apparatus according to claim 5 , wherein a speed of machining the dummy chips in the CMP process is slower than a speed of machining the semiconductor chips, and a thickness of the dummy chips is a same as a target machining thickness of the semiconductor chips in CMP machining.