IP Library › Granted Patent US 9,679,904
Granted Patent B2
US 9,679,904 · App. 14/612,613 · Granted Jun 13, 2017

Method of manufacturing semiconductor device

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Quick Facts
Patent No.
US 9,679,904
App. No.
14/612,613
Granted
Jun 13, 2017
Kind
B2
Abstract

A method of manufacturing a semiconductor device includes: forming a conductive film over a semiconductor substrate; forming a first ferroelectric film over the conductive film; forming an amorphous second ferroelectric film over the first ferroelectric film; forming a transition metal oxide material film containing ruthenium over the second ferroelectric film; forming a first conductive metal oxide film over the transition metal oxide material film without exposing the transition metal oxide material film to the air; annealing and crystallizing the second ferroelectric film; and patterning the first conductive metal oxide film, the first ferroelectric film, the second ferroelectric film, and the conductive film to form a ferroelectric capacitor.

Claims (16)

1. A method of manufacturing a semiconductor device, the method comprising:

forming an insulating film over a semiconductor substrate;

forming a conductive film over the insulating film;

forming a first ferroelectric film over the conductive film;

forming an amorphous second ferroelectric film containing iridium and ruthenium over the first ferroelectric film;

forming a first conductive metal oxide film which is made of an iridium oxide and is in contact with the second ferroelectric film;

annealing and crystallizing the second ferroelectric film after forming the first conductive metal oxide film;

patterning the first conductive metal oxide film to form a top electrode of a ferroelectric capacitor;

patterning the first ferroelectric film and the second ferroelectric film to form a capacitor dielectric film of the ferroelectric capacitor; and

patterning the conductive film to form a bottom electrode of the ferroelectric capacitor.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein in the forming the second ferroelectric film, the second ferroelectric film is formed by sputtering using a sputter target to which iridium and ruthenium are added.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein a material having the same crystal structure as the first ferroelectric film when crystallized is used as a material of the second ferroelectric film.

4. The method of manufacturing a semiconductor device according to claim 3 , wherein a material of each of the first ferroelectric film and the second ferroelectric film is an ABO3 type ferroelectric oxide when crystallized.

5. The method of manufacturing a semiconductor device according to claim 1 , the method further comprising:

forming a second conductive metal oxide film over the first conductive metal oxide film, the second conductive metal oxide film having a larger composition ratio of oxygen than the first conductive metal oxide film.

6. The method of manufacturing a semiconductor device according to claim 5 , wherein the second conductive metal oxide film is made of an iridium oxide.