Semiconductor device having plural patterns extending in the same direction
A photomask has a mask blank and a light shielding film formed on the mask blank. The light shielding film includes a plurality of opening traces extending in a first direction. An end of a first opening trace in the first direction and an end of a second opening trace in the first direction are in different positions in the first direction. The second opening trace adjoins the first opening trace.
1. A semiconductor device comprising:
a semiconductor substrate on which a predetermined layer is formed;
a first pattern extending in plan view in a first direction in the predetermined layer;
a second pattern extending in the plan view in parallel with the first pattern in the predetermined layer; and
a third pattern between the first and second patterns extending in the plan view in parallel with the first and second patterns in the predetermined layer,
wherein the first, second and third patterns have first, second and third enlarged end portions in the first direction, respectively,
wherein the first and third enlarged end portions are arranged in different positions staggered from each other in the plan view in the first direction,
wherein the first and the second enlarged end portions are substantially aligned along a second direction orthogonal to the first direction,
wherein an area established in the predetermined layer between the first, second and third enlarged end portions is free of other pattern, and
wherein the third enlarged portion is at least partially overlapped with the first and second enlarged portions in the second direction.
2. The semiconductor device as claimed in claim 1 , wherein the first and second end portions are arranged in substantially the same position as each other in the first direction.
3. The semiconductor device as claimed in claim 1 , wherein the first to third patterns have substantially the same width as each other.
4. The semiconductor device as claimed in claim 1 , wherein the first, second and third patterns have first, second and third body portions connected to the first, second and third end portions, respectively, and the first, second and third end portions are greater in width than the first, second and third body portions, respectively.
5. The semiconductor device as claimed in claim 1 , wherein a space between the first and third patterns is substantially equal to a space between the second and third patterns.
6. The semiconductor device as claimed in claim 1 , wherein the first to third patterns comprise a conductive material.
7. The semiconductor device as claimed in claim 1 , wherein a distance between the first and third end portions in the first direction is greater than a space between the first and third patterns.
8. The semiconductor device as claimed in claim 7 , wherein a distance between the first and second end portions in the first direction is shorter than the space between the first and third patterns.
9. The semiconductor device as claimed in claim 1 , further comprising a fourth pattern extending in a second direction different from the first direction.
10. The semiconductor device as claimed in claim 9 , wherein the fourth pattern is formed on the predetermined layer.
11. The semiconductor device as claimed in claim 1 , wherein a lower width of each of the first to third patterns is narrower than an upper width thereof.
12. The semiconductor device as claimed in claim 1 , further comprising a fourth pattern extending in the first direction, wherein a width of the fourth pattern is greater than that of each of the first to third patterns.
13. The semiconductor device as claimed in claim 12 , wherein the fourth pattern is formed on the predetermined layer.
14. The semiconductor device as claimed in claim 6 , wherein the first to third patterns are insulated with each other by an insulating film.