Vertical and planar TFTS on common substrate

1. An electronic component comprising:

a substrate;

a first transistor on the substrate, the first transistor having a first semiconductor channel having a first length, at least a portion of the first semiconductor channel extending in a direction parallel to the substrate, the first transistor having a first source, a first drain, a first gate dielectric, and a first gate;

a vertical-support-element having a first reentrant profile on the substrate; and

a second transistor having a second semiconductor channel having at least a portion extending in a direction orthogonal to the substrate in the first reentrant profile of the vertical-support-element, and the second semiconductor channel having a second length that is less than the first length, the second transistor having a second source, a second drain, a second gate dielectric and a second gate.

2. The electronic component of claim 1 , wherein the vertical-support-element has a second reentrant profile.

3. The electronic component of claim 2 , wherein the first semiconductor channel has a portion extending in a direction orthogonal to the substrate in the second reentrant profile.

4. The electronic component of claim 3 , wherein the electronic component is a logic gate, and wherein the second transistor and the third transistor are connected in series and are configured to operate as drive transistors, and the first transistor is configured to operate as a load transistor.

5. The electronic component of claim 2 , further comprising:

a third transistor having a third semiconductor channel, at least a portion of the third semiconductor channel extending in a direction orthogonal to the substrate in the second reentrant profile, the third transistor having a third source, a third drain, a third gate dielectric, and a third gate, wherein the second drain and the third source are electrically connected and located over the vertical-support-element.

6. The electronic component of claim 1 , wherein the first transistor is a first bottom-gate transistor and the second transistor is a bottom-gate VTFT.

7. The electronic component of claim 6 , wherein the first bottom-gate transistor is a planar bottom-gate transistor.

8. The electronic component of claim 6 , the vertical-support-element having a second reentrant profile, and the first bottom-gate transistor is a vertical bottom-gate transistor, wherein another portion of the first semiconductor channel extends in a direction orthogonal to the substrate in the second reentrant profile, and the length of the portion of the first semiconductor channel extending in the direction parallel to the substrate is greater than the length of the portion of the first semiconductor channel extending in the direction orthogonal to the substrate.

9. The electronic component of claim 6 , wherein the bottom-gate VTFT and the first bottom-gate transistor are configured to operate as an all-enhancement-mode inverter.

10. The electronic component of claim 6 , wherein the first gate and the second gate are separate regions of a common conformal conductive material layer.

11. The electronic component of claim 6 , wherein the first source, the first drain, the second source, and the second drain are separate regions of a common conformal conductive material layer.

12. The electronic component of claim 1 , wherein the first transistor is a first top-gate TFT and the second transistor is a bottom-gate VTFT.

13. The electronic component of claim 12 , wherein the first top-gate transistor is a planar top-gate transistor.

14. The electronic component of claim 12 , the vertical-support-element having a second reentrant profile, and the first top-gate transistor is a vertical top-gate transistor, wherein another portion of the first semiconductor channel extends in a direction orthogonal to the substrate in the second reentrant profile, and the length of the portion of the first semiconductor channel extending in the direction parallel to the substrate is greater than the length of the portion of the first semiconductor channel extending in the direction orthogonal to the substrate.

15. The electronic component of claim 12 , wherein the bottom-gate VTFT and the first top-gate transistor are configured to operate as an enhancement-depletion-mode inverter in which the second drain of the bottom-gate VTFT is electrically connected to the first gate and the first source of the planar top-gate TFT.

16. The electronic component of claim 12 , wherein the first gate, the second source, and the second drain are separate regions of a common conformal conductive material layer.

17. The electronic component of claim 12 , wherein the second gate, the first source, and the first drain are separate regions of a common conformal conductive material layer.

18. The electronic component of claim 1 , wherein the first gate dielectric of the first transistor is thicker than the second gate dielectric of the second transistor.

19. The electronic component of claim 1 , wherein first gate dielectric and the second gate dielectric are part of a common dielectric layer.

20. The electronic component of claim 1 , wherein the first transistor is a planar bottom-gate TFT and the second transistor is a top-gate VTFT.

21. The electronic component of claim 1 , wherein the first transistor is a planar top-gate TFT and the second transistor is a top-gate VTFT.

22. The electronic component of claim 1 wherein the first transistor and the second transistor are both n-type transistors.

23. The electronic component of claim 1 , wherein the portion of the first semiconductor channel extending in the direction parallel to the substrate is at least 10 times greater than the height of the vertical-support-element.

24. The electronic component of claim 1 , wherein the electronic component is a logic gate, and wherein the second transistor is configured to operate as a drive transistor, and the first transistor is configured to operate as a load transistor.