SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
One device includes a first chip having first electrodes on one surface, and a rough portion on another surface. The device also includes a second chip having second electrodes on one surface, and third electrodes electrically connected to the second electrodes and disposed on another surface, and stacked on the first chip so the third electrodes are electrically connected to the first electrodes. The device includes a resin layer covering the first and second chips so at least the other surface of the first chip and the one surface of the second chip are exposed. The device also includes a wiring board having connection pads formed on one surface, and stacked on the second chip so the connection pads are electrically connected to the second electrodes. The device includes a sealing resin portion formed on the wiring board to cover the first chip, the second chip, and the resin layer.
1 . A semiconductor device comprising:
a first semiconductor chip on one surface of which a plurality of first bump electrodes are formed, and in which a rough surface portion is formed in at least an end portion of another surface opposing said one surface;
a second semiconductor chip on one surface of which a plurality of second bump electrodes are formed, and in which a plurality of third bump electrodes, electrically connected to the plurality of second bump electrodes, are formed on another surface opposing said one surface, and which is stacked on the first semiconductor chip in such a way that the plurality of third bump electrodes are electrically connected to the plurality of first bump electrodes on the first semiconductor chip;
a resin layer covering the first and second semiconductor chips in such a way that at least the other surface of the first semiconductor chip and the one surface of the second semiconductor chip are exposed;
a wiring board on one surface of which a plurality of connection pads are formed, and which is stacked on the second semiconductor chip in such a way that the plurality of connection pads are electrically connected to the plurality of second bump electrodes; and
a sealing resin portion formed on the wiring board in such a way as to cover the first semiconductor chip, the second semiconductor chip and the resin layer.
2 . The semiconductor device as claimed in claim 1 , wherein the rough surface portions are formed in the four corner regions of the other surface of the first semiconductor chip.
3 . The semiconductor device as claimed in claim 1 , wherein the rough surface portions include a mark portion for displaying identification information.
4 . The semiconductor device as claimed in claim 1 , wherein the rough surface portion is formed in a region other than a part forming a mark portion, on the other surface of the first semiconductor chip.
5 . The semiconductor device as claimed in claim 1 , wherein the resin layer is provided in advance on the second semiconductor chip.
6 . A method of manufacturing a semiconductor device, comprising:
preparing a first semiconductor chip, on one surface of which a plurality of first bump electrodes are formed;
preparing a second semiconductor chip, on one surface of which a plurality of second bump electrodes are formed, and in which a plurality of third bump electrodes, electrically connected to the plurality of second bump electrodes, are formed on another surface opposing said one surface;
stacking the second semiconductor chip on the first semiconductor chip in such a way as to connect the plurality of third bump electrodes electrically to the plurality of first bump electrodes on the first semiconductor chip;
covering the first and second semiconductor chips with a resin layer in such a way as to expose at least the other surface of the first semiconductor chip and the one surface of the second semiconductor chip;
forming a rough surface portion in at least an end portion of another surface of the first semiconductor chip opposing the one surface;
stacking a wiring board, on one surface of which a plurality of connection pads are formed, on the second semiconductor chip in such a way that the plurality of connection pads are electrically connected to the plurality of second bump electrodes; and
forming a sealing resin portion on the wiring board in such a way as to cover the first semiconductor chip, the second semiconductor chip and the resin layer.
7 . The method of manufacturing a semiconductor device as claimed in claim 6 , wherein the rough surface portion formed on the other surface of the first semiconductor chip includes a mark portion, and said mark portion is formed in the same step as the step in which the rough surface portion is formed.
8 . The method of manufacturing a semiconductor device as claimed in claim 6 , wherein covering the first and second semiconductor chips with the resin layer comprises providing the resin layer in advance on the other surface of the second semiconductor chip, and by stacking the second semiconductor chip on the first semiconductor chip a gap between the chips is filled with the resin layer.