Method for manufacturing semiconductor device
View Patent ↗In one device, a first space partitioned by first and second line patters is filled with a multilayer film that is composed of a first silicon film having a high impurity concentration relative to a standard plug impurity concentration and a second silicon film having a low impurity concentration relative to the standard plug impurity concentration, and is divided by forming a groove using a mask film on the side wall of the second line pattern. As a result, expansion of a seam, which is formed only on the second silicon film having a low impurity concentration, is suppressed. After that, an isolation insulating film is embedded in the groove and impurity diffusion is carried out by a heat treatment, so that divided plugs as a whole are made to have the standard plug impurity concentration.
1. A method of manufacturing a semiconductor, comprising:
demarcating a first space portion by means of a plurality of first line patterns extending in a first direction, and a plurality of second line patterns extending over the plurality of first line patterns in a second direction which intersects the first direction;
depositing a first silicon film, containing an impurity having a first concentration, to a thickness that does not fill the first space portion;
depositing a second silicon film, containing an impurity having a second concentration, to a thickness that fills the first space portion and fills between the second line patterns;
forming a silicon filler body by etching back the first and second silicon films in such a way as to make them lower than an upper surface of the second line pattern;
forming masking films on each of the sidewalls of the second line patterns in such a way that a portion of the silicon filler body is exposed;
selectively removing the silicon filler body, using the masking film as a mask, to form a first groove;
filling the first groove with an isolating and insulating film;
removing the masking film, a portion of the isolating and insulating film, and portions of the second line patterns in such a way that the upper surfaces of the silicon filler body that has been divided by the isolating and insulating film are exposed; and
forming a second groove in the silicon filler body, and then employing heat treatment to bring the impurity concentration in the divided silicon filler body to a third concentration;
and in that the first concentration is higher than the third concentration, and the second concentration is lower than the third concentration.
2. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the second groove is formed in such a way as to expose a joint in the second silicon film, in a central portion of the first space portion.
3. The method of manufacturing a semiconductor device as claimed in claim 2 , wherein the relationship W 2 −WS>W 1 is satisfied, where W 1 is a gap between the first line patterns, W 2 is a gap between the second line patterns, and WS is the width of the first groove (where W 1 , W 2 and WS represent values in an identical plane).
4. The method of manufacturing a semiconductor device as claimed in claim 3 , wherein the first silicon film has a film thickness at most equal to ¼ of the gap W 1 between the first line patterns.
5. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the third concentration is an impurity concentration sufficient to impart a required electrical conductivity to a final silicon plug formed from the divided silicon filler body.
6. The method of manufacturing a semiconductor device as claimed in claim 5 , wherein the second concentration is at least 15% lower than the third concentration.
7. The method of manufacturing a semiconductor device as claimed in claim 5 , wherein the following relationships are satisfied:
V 1+ V 2=100%
C 1× V 1+ C 2× V 2= C 3
where V 1 (%) is the volume fraction of the first silicon film in the final silicon plug, C 1 is the first concentration, V 2 (%) is the volume fraction of the second silicon film in the final silicon plug, C 2 is the second concentration, and C 3 is the third concentration.
8. The method of manufacturing a semiconductor device as claimed in claim 7 , wherein the first concentration is 7E20 to 1.5E21 atoms/cm 3 , and the second concentration is 4E20 to 5E20 atoms/cm 3 .
9. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein bringing the impurity concentration in the silicon filler body to the third concentration is combined with heat treatment.
10. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the second line patterns are formed with an inclined side-surface shape such that an upper portion is wider than a bottom portion.
11. The method of manufacturing a semiconductor device as claimed in claim 10 , wherein the width of a bottom portion of the second groove is less than a width of an opening upper portion thereof.
12. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the first space portion is formed on a semiconductor substrate, and is formed exposing first and second diffusion regions which are separated from one another.
13. The method of manufacturing a semiconductor device as claimed in claim 12 , wherein the first line pattern contains a wiring line connected to a third diffusion region formed on the semiconductor substrate.
14. The method of manufacturing a semiconductor device as claimed in claim 13 , comprising:
forming on the semiconductor substrate a plurality of element isolation regions extending in a third direction that is different from the first and second directions, and defining an active region extending in the third direction, between the element isolation regions;
implanting an impurity having the opposite conduction type to the semiconductor substrate into the surface of the active region to form a diffusion region;
forming a plurality of embedded word lines extending in the second direction, and repeatedly dividing the diffusion region in the order first diffusion region, third diffusion region, second diffusion region;
forming, as the first line pattern, a bit line which is connected to the third diffusion region, and an upper portion and a side surface of which are covered by an insulating film; and
depositing an insulating film covering the bit line and removing the insulating film that extends over and between a first diffusion region and a second diffusion region that are adjacent to one another, in such a way that the insulating film above the third diffusion region remains, to form the second line patterns.
15. The method of manufacturing a semiconductor device as claimed in claim 14 , comprising making the upper surfaces of the divided silicon filler body lower than the upper surfaces of the remaining first and second line patterns.
16. The method of manufacturing a semiconductor device as claimed in claim 14 , comprising depositing a silicidable metal film on the exposed upper surfaces of the divided silicon filler body, and heat-treating said silicidable metal film to form a silicide film.
17. The method of manufacturing a semiconductor device as claimed in claim 14 , comprising forming pad electrodes, electrically connected to the respective upper surfaces of the divided silicon filler body.
18. The method of manufacturing a semiconductor device as claimed in claim 17 , comprising forming capacitors in contact with the pad electrodes.
19. The method of manufacturing a semiconductor device as claimed in claim 18 , wherein forming the capacitors includes forming cylindrical lower electrodes in contact with the pad electrodes.