IP Library › Granted Patent US 9,825,250
Granted Patent B2
US 9,825,250 · App. 14/897,021 · Granted Nov 21, 2017

Light-emitting element, display device, and method for manufacturing light-emitting element

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Quick Facts
Patent No.
US 9,825,250
App. No.
14/897,021
Granted
Nov 21, 2017
Kind
B2
Abstract

An organic EL element includes: a first electrode that is a metal layer; a transparent conductive layer containing indium zinc oxide; and a light-emitting layer, wherein the first electrode, the transparent conductive layer, and the light-emitting layer are stacked, and a ratio of zinc to indium in a vicinity of an interface of the transparent conductive layer is lower than or equal to 0.25, the interface being closer to the light-emitting layer.

Claims (53)

1. A light-emitting element comprising:

a metal layer;

a transparent conductive layer containing indium zinc oxide; and

a light-emitting layer,

wherein the metal layer, the transparent conductive layer, and the light-emitting layer are stacked, and

a ratio of zinc to indium in a surface layer of the transparent conductive layer is lower than or equal to 0.25, the surface layer facing the light-emitting layer.

2. The light-emitting element according to claim 1 ,

wherein the transparent conductive layer is approximately 5 nm or less in thickness.

3. The light-emitting element according to claim 1 ,

wherein the metal layer contains aluminum.

4. The light-emitting element according to claim 1 , further comprising

a hole injection layer is disposed between the transparent conductive layer and the light-emitting layer.

5. The light-emitting element according to claim 4 ,

wherein the hole injection layer contains an organic amine.

6. The light-emitting element according to claim 4 , further comprising

an electron block layer is disposed between the hole injection layer and the light-emitting layer.

7. A display device, comprising

the light-emitting element according to claim 1 .

8. A method for manufacturing a light-emitting element, the method comprising:

forming a metal layer;

forming a transparent conductive layer above the metal layer, the transparent conductive layer containing indium zinc oxide;

oxidizing the metal layer; and

forming a light-emitting layer above the transparent conductive layer,

wherein a ratio of zinc to indium in a surface layer of the transparent conductive layer is lower than or equal to 0.25, the surface layer facing the light-emitting layer.

9. The method according to claim 8 ,

wherein the oxidizing includes baking the metal layer or irradiating the metal layer with ultraviolet rays.

10. The method according to claim 8 ,

wherein the oxidizing is performed after the forming of the transparent conductive layer.

11. The method according to claim 8 ,

wherein the oxidizing is performed between the forming of the metal layer and the forming of the transparent conductive layer.

12. The method according to claim 8 ,

wherein in the forming of the transparent conductive layer, the transparent conductive layer is formed with a thickness of approximately 5 nm or less.

13. The method according to claim 8 ,

wherein the metal layer contains aluminum.

14. The method according to claim 8 , further comprising

forming a hole injection layer between the forming of the transparent conductive layer and the forming of the light-emitting layer.

15. The method according to claim 14 ,

wherein the hole injection layer contains an organic amine.

16. The method according to claim 14 , further comprising

forming an electron block layer between the forming of the hole injection layer and the forming of the light-emitting layer.

17. The light-emitting element according to claim 1 , wherein

the indium zinc oxide contained in the transparent conductive layer is in contact with the metal layer,

the metal layer contains a metallic element having a lower ionization potential than zinc, and

the transparent conductive layer has a thickness of 5 nm or less.

18. The light-emitting element according to claim 1 , further comprising

forming a zinc segregation layer in the surface layer of the transparent conductive layer, the zinc segregation layer being positioned closer to the light-emitting layer than a remaining portion of the surface layer.

19. The light-emitting element according to claim 1 , wherein

the transparent conductive layer is formed directly on the metal layer, and

the metal layer contains an aluminum alloy.

20. The light-emitting element according to claim 1 , wherein

wherein the ratio of zinc to indium in the surface layer of the transparent conductive layer is higher than or equal to 0.17.

21. The light-emitting element according to claim 1 , wherein

the transparent conductive layer permits passing of certain wavelengths of light while blocking others to modify a color of the light passing therethrough.