DIFFERENTIAL PHASE BIASING MODULATOR APPARATUS AND METHOD
A circuit that allows the control of a parameter in each arm of a Mach-Zehnder interferometer or modulator in push-pull mode using a single control terminal and a ground (or a differential driving circuit). The parameter that is controlled can be a phase shift, a modulation or an attenuation. The magnitude and the frequency of the parameter can be adjusted.
1 . An optoelectronic device, comprising:
an optical carrier having two arms:
a first of said two arms having a first optical input port configured to receive a first input optical signal, and a first optical output port configured to provide a first modified optical signal;
a second of said two arms having a second input optical port configured to receive a second input optical signal, and a second optical output port configured to provide a second modified optical signal;
a first diode having a first polarity, said first diode configured to modify a property of said first of said two arms of said optical carrier;
a second diode having a second polarity, said second diode configured to modify said property of a second of said two arms of said optical carrier;
said first diode and said second diode connected in parallel connection between a first electrical terminal and a second electrical terminal, said second polarity of said second diode opposite to said first polarity of said first diode.
2 . The optoelectronic device of claim 1 , further comprising a signal source configured to provide a time-variable electrical signal to said first electrical terminal and said second electrical terminal, said time-variable electrical signal configured to cause only one of said first diode and said second diode to attain a threshold voltage at any one time.
3 . The optoelectronic device of claim 1 , further comprising a first and a second resistive element in series with a respective one of said first diode and said second diode.
4 . The optoelectronic device of claim 1 , wherein said first diode and said second diode are configured as resistive elements.
5 . The optoelectronic device of claim 2 , wherein said first diode and said second diode are configured to modify a phase shift property.
6 . The optoelectronic device of claim 1 , wherein said first diode and said second diode are configured to modify at least one of a carrier concentration within said first waveguide and a carrier concentration within said second waveguide.
7 . The optoelectronic device of claim 5 , wherein said first diode and said second diode are configured to modify a phase shift property.
8 . The optoelectronic device of claim 5 , wherein said first diode and said second diode are configured to modify an attenuation property.
9 . The optoelectronic device of claim 1 , wherein said first diode and said second diode are configured to modify a modulation property.
10 . The optoelectronic device of claim 1 , wherein said first diode and said second diode are configured to modify an attenuation property.
11 . The optoelectronic device of claim 1 , wherein said driver is configured to operate on an input optical signal having a wavelength within the range of a selected one of an O-Band, an E-band, a C-band, an L-Band, an S-Band and a U-band.
12 . The optoelectronic device of claim 1 , wherein said two arms are configured as a first arm and a second arm of a Mach-Zehnder interferometer, respectively.
13 . The optoelectronic device of claim 1 , wherein said driver is configured to modify a relative time skew of the first output port relative to the second output port.
14 . The optoelectronic device of claim 1 , wherein said two arms are configured as the optical paths of a first optical resonator and a second optical resonator, respectively.
15 . The optoelectronic device of claim 1 , wherein one of said first and said second diodes comprises silicon.
16 . The optoelectronic device of claim 1 , wherein one of said first and said second diodes comprises germanium.
17 . The optoelectronic device of claim 1 , wherein said first and second waveguides are fabricated from a selected one of silicon, silicon nitride, SiON, InP, SiO 2 , and lithium niobate.
18 . The optoelectronic device of claim 1 , wherein each of said first and said second waveguides are capable of supporting one or more optical modes.
19 . The optoelectronic device of claim 1 , wherein said first input optical signal and said second input optical are the same input optical signal.
20 . A method of manipulating an optical signal, comprising the steps of:
providing an optoelectronic device, comprising:
an optical carrier having two arms:
a first of said two arms having a first optical input port configured to receive a first input optical signal, and a first optical output port configured to provide a first modified optical signal;
a second of said two arms having a second input optical port configured to receive a second input optical signal, and a second optical output port configured to provide a second modified optical signal;
a first diode having a first polarity, said first diode configured to modify a property of said first of said two arms of said optical carrier;
a second diode having a second polarity, said second diode configured to modify said property of a second of said two arms of said optical carrier; and
said first diode and said second diode connected in parallel connection between a first electrical terminal and a second electrical terminal, said second polarity of said second diode opposite to said first polarity of said first diode;
applying a time-variable electrical signal to said first electrical terminal and said second electrical terminal, said time-variable electrical signal causing only one of said first diode and said second diode to attain a threshold voltage at any one time;
providing at a selected one of said first optical input port and said first optical input port a respective input optical signal;
observing a modified optical signal at a respective one of said first optical output port and said second optical output port; and
performing at least one of recording said modified optical signal, transmitting said modified optical signal to another apparatus, and displaying said modified optical signal to a user.
21 . The method of manipulating an optical signal of claim 20 , wherein said optoelectronic device further comprises a first and a second resistive element in series with a respective one of said first diode and said second diode.
22 . The method of manipulating an optical signal of claim 20 , wherein said optoelectronic device comprises a Mach-Zehnder interferometer.
23 . The method of manipulating an optical signal of claim 20 , wherein said modified optical signal is phase shifted relative to said input optical signal.
24 . The method of manipulating an optical signal of claim 20 , wherein said modified optical signal is modulated relative to said input optical signal.
25 . The method of manipulating an optical signal of claim 20 , wherein said modified optical signal is attenuated relative to said input optical signal.
26 . The method of manipulating an optical signal of claim 20 , wherein said input optical signal has a wavelength within the range of a selected one of an O-Band, an E-band, a C-band, an L-Band, an S-Band and a U-band.
27 . The method of manipulating an optical signal of claim 20 , wherein said first input optical signal and said second input optical are the same input optical signal.
28 . The method of manipulating an optical signal of claim 20 , wherein said optoelectronic device further comprises a signal source configured to provide a time-variable electrical signal to said first electrical terminal and said second electrical terminal, said time-variable electrical signal configured to cause only one of said first diode and said second diode to attain a threshold voltage at any one time.