Vertical structure LEDs
View Patent ↗A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface.
1. A light-emitting device, comprising:
a support structure of metal;
a GaN-based semiconductor structure on the support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer, and an n-type GaN-based layer,
wherein the GaN-based semiconductor structure has a first surface, a side surface, and a second surface,
wherein the first surface, relative to the second surface, is proximate to the support structure, and
wherein the second surface is opposite to the first surface;
a p-type electrode on the support structure; and
an n-type electrode on the second surface of the GaN-based semiconductor structure; and
a passivation layer on the side surface of the GaN-based semiconductor structure,
wherein the passivation layer extends from the side surface of the GaN-based semiconductor structure to cover the second surface of the GaN-based semiconductor structure and a side surface and an upper surface of the n-type electrode, and
wherein a portion of the passivation layer is between the semiconductor structure and the support structure.
2. The device according to claim 1 , wherein a thickness of the GaN-based semiconductor structure is 100 times or less than a thickness of the p-type GaN-based layer.
3. The device according to claim 1 , wherein a thickness of the GaN-based semiconductor structure is 5 times or less than a thickness of the n-type GaN-based layer.
4. The device according to claim 1 , wherein a thickness of the GaN-based semiconductor structure is 1.7 times or less than a thickness of the n-type GaN-based layer.
5. The device according to claim 1 , wherein the support structure comprises Cu.
6. The device according to claim 1 , wherein the GaN-based semiconductor structure is less than 5 microns thick.
7. The device according to claim 1 , wherein the support structure is at least 10 times thicker than the GaN-based semiconductor structure.
8. The device according to claim 1 , wherein an area of the passivation layer covering the side surface of the n-type electrode is larger than an area of the passivation layer covering the upper surface of the n-type electrode.
9. The device according to claim 1 , further comprising a metal pad on the passivation layer covering the upper surface of the n-type electrode.
10. The device according to claim 9 , wherein the metal pad is on the passivation layer covering the upper surface of the n-type electrode.
11. The device according to claim 1 , wherein the passivation layer covering the upper surface of the n-type electrode is patterned to form an open space to expose the upper surface of the n-type electrode.
12. The device according to claim 1 , wherein an area of the passivation layer covering the n-type GaN-based layer is larger than an area of the passivation layer covering the p-type GaN-based layer.
13. The device according to claim 1 , wherein an area of the passivation layer covering the n-type GaN-based layer is larger than an area of the passivation layer covering the GaN-based active layer.
14. The device according to claim 1 , wherein an area of the passivation layer covering the n-type GaN-based layer is larger than an area of the passivation layer covering the side surface of the n-type electrode.
15. The device according to claim 1 , wherein an area of the passivation layer covering the n-type GaN-based layer is larger than an area of the passivation layer covering the upper surface of the n-type electrode.
16. The device according to claim 1 , wherein the passivation layer is in contact with the support structure.
17. The device according to claim 1 , wherein the support structure is thicker than the p-type GaN-based layer.
18. The device according to claim 1 , wherein the support structure is thicker than the n-type GaN-based layer.
19. The device according to claim 1 , wherein the support structure comprises a metal layer and metal coating layer.
20. The device according to claim 19 , wherein the metal coating layer is between the metal layer and the p-type electrode.