Semiconductor device and method of manufacturing the same
View Patent ↗Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) disposing a semiconductor chip over a first surface of a wiring substrate such that a main surface of the semiconductor chip faces the first surface of the wiring substrate, and contacting a metal bump formed on the main surface of the semiconductor chip with a solder located inside of an opening formed in a solder resist formed on the first surface of the wiring substrate, while heating the wiring substrate;
(b) after the step (a), supplying O2 plasma to the semiconductor chip and the wiring substrate; and
(c) after the step (b), injecting a resin between the main surface of the semiconductor chip and the first surface of the wiring substrate,
wherein the solder resist is comprised of an organic resin made of one of epoxy, polyimide and acrylic.
2. The method according to claim 1 , wherein the step (a) further comprises a scrubbing step for scrubbing the metal bump of the semiconductor chip and the solder of the wiring substrate with each other.
3. The method according to claim 1 , wherein, in the step (a), the metal bump is contacted with the solder, while heating the semiconductor chip and the wiring substrate.