Semiconductor device with DC/DC converter circuit
View Patent ↗Provided is a semiconductor device including: a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected town input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.
1. A semiconductor device including a DC/DC converter circuit, the semiconductor device comprising:
a substrate;
first, second, and third frames formed over the substrate;
a compound semiconductor substrate formed over the substrate;
a first transistor constituting a part of the DC/DC converter circuit and formed over the compound semiconductor substrate; and
a second transistor constituting another part of the DC/DC converter circuit and formed over the compound semiconductor substrate,
wherein the first transistor includes a first gate electrode, a first gate insulating film, a first source electrode, and a first drain electrode and is arranged between a first pad and a second pad in plan view,
wherein the second transistor includes a second gate electrode, a second gate insulating film, a second source electrode, and a second drain electrode and is arranged between the second pad and a third pad in plan view,
wherein the first drain electrode is connected to the first pad,
wherein the first source electrode and the second drain electrode are connected to the second pad,
wherein the second source electrode is connected to the third pad,
wherein the first pad is connected to the first frame through a first clip,
wherein the second pad is connected to the second frame through a second clip, and
wherein the third pad is connected to the third frame through a third clip.
2. The semiconductor device according to claim 1 , wherein the compound semiconductor substrate has a GaN layer and an AlGaN layer over the GaN layer.
3. The semiconductor device according to claim 2 ,
wherein a part of the first gate electrode is disposed within a recess in the compound semiconductor substrate, and
wherein the second gate electrode has a planar gate structure.
4. The semiconductor device according to claim 3 ,
wherein the first transistor is a normally-off type transistor, and
wherein the second transistor is a normally-on type transistor.
5. The semiconductor device according to claim 2 , wherein each of the first, second, and third clips includes copper.
6. The semiconductor device according to claim 5 , wherein the first, second, and third pads are bonded by solder to the first, second, and third clips, respectively.