Diode device of transient voltage suppressor and manufacturing method thereof
A diode device of a transient voltage suppressor (TVS) is disclosed. The diode device includes a substrate, a first well, a second well, a first electrode and a second electrode. The substrate has a first surface. The first well is formed in the substrate and near the first surface. The second well is formed in the substrate and near the first surface. There is a gap between the first well and the second well. The first electrode is electrically connected with the first well. The second electrode is electrically connected with the second well. A current path is formed from the first electrode, the first well, the substrate, the second well to the second electrode. The current path passes through a plurality of PN junctions to form an equivalent circuit having a plurality of equivalent capacitances coupled in series.
1. A diode device of a transient voltage suppressor (TVS), comprising:
a substrate having a first surface;
a first well formed in the substrate and near the first surface;
a second well formed in the substrate and near the first surface, wherein there is a gap between the first well and the second well and only the substrate is disposed in the gap;
a first heavily-doped region electrically connected with the first well and used as a first electrode; and
a second heavily-doped region electrically connected with the second well and used as a second electrode,
wherein a current path is formed from the first electrode, the first well, the substrate, the second well to the second electrode; the current path passes through a plurality of PN junctions to form an equivalent circuit having a plurality of equivalent capacitances coupled in series.
2. The diode device of claim 1 , wherein the gap ranges between 1 um and 10 um.
3. The diode device of claim 1 , wherein at least a part of the first electrode is disposed in the first well.
4. The diode device of claim 1 , wherein the first electrode is disposed out of the first well.
5. The diode device of claim 1 , wherein the first well and the second well comprise a first conductive material and the substrate comprises a second conductive material; the first well, the second well and the substrate form the plurality of PN junctions.
6. The diode device of claim 1 , wherein the first well and the second well have the same conductive type.
7. The diode device of claim 1 , wherein the first well and the second well have different conductive types.
8. A diode device of a transient voltage suppressor (TVS), comprising:
a substrate with first conductive type having a first surface;
a deep well with second conductive type formed in the substrate and near the first surface;
a first well formed in the deep well and near the first surface;
a second well formed in the deep well and near the first surface, wherein there is a gap between the first well and the second well and only the deep well is disposed in the gap;
a first heavily-doped region with first conductive type electrically connected with the first well and used as a first electrode; and
a second heavily-doped region with second conductive type electrically connected with the second well and used as a second electrode,
wherein a current path is formed from the first electrode, the first well, the deep well, the second well to the second electrode; the current path passes through a plurality of PN junctions to form an equivalent circuit having a plurality of equivalent capacitances coupled in series.
9. The diode device of claim 8 , wherein the gap ranges between 1 um and 10 um.
10. The diode device of claim 8 , wherein at least a part of the first electrode is disposed in the first well.
11. The diode device of claim 8 , wherein the first electrode is disposed out of the first well.
12. The diode device of claim 8 , wherein the first well and the second well have the same conductive type.
13. The diode device of claim 8 , wherein the first well and the second well have different conductive types.