IP Library Granted Patent US 9,811,709
Granted Patent B2
US 9,811,709 · App. 15/193,585 · Granted Nov 7, 2017

Capacitor sensor structure, circuit board structure with capacitor sensor, and package structure of capacitive sensor

Inventors: Ming-Chung Chang (Hsinchu County, TW); Tzu Wei Liu (Hsinchu County, TW)
Assignee: MSTAR SEMICONDUCTOR, INC.
G06K9/0002H01L23/4985H01L23/49811H01L23/49822H01L23/49827H01L23/49838H01L23/16H01L2224/16227H01L2224/32225H01L2224/32245H01L2224/48091H01L2224/48227H01L2224/48235H01L2224/73204H01L2224/73215H01L2224/73253H01L2224/73265H01L2224/92125H01L2924/157H01L2924/1579H01L2924/15192H01L2924/15311H01L2924/15313H01L2924/15321H01L2924/15787H01L2924/181H01L2924/19107
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Quick Facts
Patent No.
US 9,811,709
App. No.
15/193,585
Granted
Nov 7, 2017
Kind
B2
Abstract

A capacitive sensor structure includes: a substrate; a multilayer wire structure, disposed on the substrate to form a passive sensing circuit; and a semiconductor chip, formed thereon a control circuit, fixedly mounted on a surface of the substrate and electrically connected to the multilayer wire structure.

Claims (30)

1. A capacitive fingerprint sensor structure, comprising:

a substrate;

a semiconductor chip, comprising a fingerprint sensing controller circuit; and

a redistribution layer (RDL), disposed on said substrate and electrically connected to said semiconductor chip, comprising:

a first wire, longer than an orthographic projection of said semiconductor chip;

a second wire, longer than said orthographic projection; and

a dielectric material, disposed between said first wire and said second wire,

wherein said RDL is a passive capacitance sensing circuit used by said fingerprint sensing controller circuit.

2. The capacitive fingerprint sensor structure according to claim 1 , wherein said RDL is formed by at least one of an un-doped intrinsic semiconductor material, a precision high-purity alumina ceramic substrate, a packaging molding material, and a packaging liquid material.

3. The capacitive fingerprint sensor structure according to claim 1 , wherein the semiconductor chip is electrically connected to said RDL on the substrate by a flip-chip method and via at least one bonding pad structure.

4. The capacitive fingerprint sensor structure according to claim 3 , wherein the substrate further comprises an interconnection terminal and a stiffener metal ring formed on said RDL.

5. The capacitive fingerprint sensor structure according to claim 3 , wherein the substrate further comprises at least one through-base via (TBV) to electrically conduct on said RDL and the semiconductor chip, a protection layer is further disposed above an upper surface of the substrate, and the protection layer is formed by one of a ceramic adhesive and a hard coating.

6. The capacitive fingerprint sensor structure according to claim 1 , wherein the substrate further comprises a through-base via (TBV), the semiconductor chip is electrically connected to the TBV on the substrate via at least one bonding wire, a protection layer is further disposed above an upper surface of the substrate, and the protection layer is formed by one of a ceramic adhesive and a hard coating.

7. The capacitive fingerprint sensor structure according to claim 1 , further comprising:

a circuit board, comprising:

a first surface, attached to the substrate;

a second surface, attached to the semiconductor chip; and

via, electrically connecting the semiconductor chip to the RDL.

8. The capacitive fingerprint sensor structure according to claim 7 , wherein said RDL is formed by at least one selected from a group consisting of an un-doped intrinsic semiconductor material, a precision high-purity alumina ceramic substrate, a packaging molding material, and a packaging liquid material.

9. The capacitive fingerprint sensor structure according to claim 7 , wherein the semiconductor chip is electrically connected to the via of the circuit board by a flip-chip method and via at least one bonding pad structure, and between the semiconductor chip and the circuit board is filled with an under-fill adhesive layer.

10. The capacitive fingerprint sensor structure according to claim 7 , wherein the semiconductor chip is electrically connected to the via on the circuit board via at least one first bonding wire, and the first bonding wire and the semiconductor chip are enclosed by a protection structure.

11. The capacitive fingerprint sensor structure according to claim 7 , wherein said RDL comprises a revealed bonding region, which is electrically connected to the first surface of the circuit board via a second bonding wire.

12. The capacitive fingerprint sensor structure according to claim 1 , further comprising:

a packaging substrate, disposed below the substrate; and

a protection layer, disposed above the packaging substrate, at least enclosing a part of the substrate and the RDL.

13. The capacitive fingerprint sensor structure according to claim 12 , wherein the packaging substrate is an organic substrate comprising a first surface and a second surface, the substrate is disposed above the first surface, a third surface of the semiconductor chip is fixedly connected to the substrate via a film-over-wire (FOW), a fourth surface of the semiconductor chip is electrically connected to the first surface via at least one first bonding wire, and the third surface of the semiconductor chip is electrically connected to the first surface via at least one second bonding wire.

14. The capacitive fingerprint sensor structure according to claim 12 , wherein the packaging substrate is an organic substrate comprising a first surface and a second surface, the substrate is disposed on the first surface, the semiconductor chip is electrically connected to the second surface of the organic substrate by a flip-chip method and via at least one bonding pad structure, and said RDL is electrically connected to the first surface via at least one first bonding wire.

15. The capacitive fingerprint sensor structure according to claim 12 , wherein the packaging substrate is a flexible substrate comprising a first surface and a second surface, the substrate is disposed on the first substrate, the semiconductor chip is electrically connected to the second surface of the organic substrate by a flip-chip method and via at least one bonding pad structure, said RDL is electrically connected to the first surface via at least one first bonding wire.

16. The capacitive fingerprint sensor structure according to claim 15 , further comprising a support metal plate disposed at one side of the semiconductor chip.

17. The capacitive fingerprint sensor structure according to claim 12 , wherein the packaging substrate is a flexible substrate comprising a first surface and a second surface, the substrate is disposed on the first surface, the semiconductor chip is electrically connected to the first surface of the organic substrate by a flip-chip method and via at least one bonding pad structure, and said RDL is electrically connected to the first surface via at least one first bonding wire.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 18, 2021
From: MEDIATEK INC.
To: XUESHAN TECHNOLOGIES INC.
Reel/Frame 056593/0167 →
MERGER Recorded Oct 8, 2019
From: MSTAR SEMICONDUCTOR, INC.
To: MEDIATEK INC.
Reel/Frame 050665/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2016
From: CHANG, MING-CHUNG; LIU, TZU WEI
To: MSTAR SEMICONDUCTOR, INC.
Reel/Frame 039018/0351 →
Priority Claims (1)
TW 104122620 A · Jul 13, 2015 · national
Continuity (1)
Related Publication 20170017823A1 · Jan 19, 2017