Multiple TFTs on common vertical support element
An electronic element includes a substrate, and a vertical-support-element located on the substrate, the vertical-support-element extending away from the substrate and having a perimeter over the substrate, wherein the vertical-support-element has a reentrant profile around at least a portion of the perimeter. Three or more vertical transistors are positioned around the perimeter of the vertical-support-element, each of the transistors having a semiconductor channel being located in a corresponding region of the reentrant profile.
1. An electronic element comprising: a substrate;
a vertical-support-element boated on the substrate, the vertical-support-element extending away from the substrate and having a perimeter over the substrate, wherein the vertical-support-element has a reentrant profile around at least a portion of the perimeter; and
three or more vertical transistors positioned at distinct non-overlapping positions around the perimeter of the vertical-support-element, each of the vertical transistors having a semiconductor channel being located in a corresponding region of the reentrant profile.
2. The electronic element of claim 1 , wherein the three or more vertical transistors include at least one vertical transistor that is independently operable.
3. The electronic element of claim 1 , wherein the three or more vertical transistors include at least one pair of series-connected vertical transistors, each pair of series-connected vertical transistors including a first vertical transistor having a first semiconductor channel and a second vertical transistor having a second semiconductor channel, wherein the first vertical transistor and the second vertical transistor have an electrically common gate electrode.
4. The electronic element of claim 3 , wherein the first vertical transistor and the second vertical transistor in a particular pair of series-connected vertical transistors are positioned on opposite sides of the vertical support structure.
5. The electronic element of claim 3 , wherein the first vertical transistor and the second vertical transistor in a particular pair of series-connected vertical transistors are positioned on adjacent sides of the vertical-support-structure.
6. The electronic element of claim 3 , wherein the first vertical transistor and the second vertical transistor in a particular pair of series-connected vertical transistors are positioned on the same side of the vertical-support-structure in adjacent regions of the reentrant profile.
7. The electronic element of claim 1 , wherein the three or more vertical transistors include:
an independently operable vertical transistor; and
a pair of series-connected vertical transistors including a first vertical transistor having a first semiconductor channel and a second vertical transistor having a second semiconductor channel, wherein the first vertical transistor and the second vertical transistor have an electrically common gate electrode.
8. The electronic element, of claim 1 , wherein the vertical-support-element has a substantially rectangular perimeter having four edges, and wherein each of the vertical transistors is formed on one of the edges.
9. The electronic element of claim 1 , wherein each vertical transistor includes:
a conformal semiconductor layer including a first portion over the top of the vertical-support-element, a second portion over the substrate and not over the vertical-support-element, and a third portion located in the corresponding region of the reentrant profile;
a first electrode located in contact with the first portion of the conformal semiconductor layer;
a second electrode located in contact with the second portion of the conformal semiconductor layer;
a conformal conductive gate layer including a portion located in the corresponding region of the reentrant profile; and
a conformal dielectric layer including a portion located in the corresponding region of the reentrant profile between the conformal semiconductor layer and the conformal conductive gate layer;
wherein the semiconductor channel corresponds to a portion of the conformal semiconductor layer between the first electrode and the second electrode.
10. The electronic′, element of claim 9 , wherein at least one of the vertical transistors is a top-gate transistor wherein the conformal semiconductor layer is located over the vertical support element, the conformal dielectric layer is located over the conformal semiconductor layer, and the conformal conductive gate layer is located over the conformal dielectric layer.
11. The electronic element of claim 9 , wherein at least one of the vertical transistors is a bottom-gate transistor wherein the conformal conductive gate layer is located over the vertical support element, the conformal dielectric layer is located over the conformal conductive gate layer, and the conformal semiconductor layer located over the conformal dielectric layer.
12. The electronic element of claim 1 , wherein the vertical-support-element includes a polymer post and an inorganic material cap on top of the polymer post.
13. The electronic element of claim 1 , wherein at least one of the vertical transistors is an enhancement-mode transistor.
14. The electronic element of claim 1 , wherein at least one of the vertical transistors is a depletion-mode transistor.
15. The electronic element of claim 1 , wherein at least one of the vertical transistors is an n-type transistor.
16. The electronic element of claim 15 , wherein the n-type transistor is a metal oxide thin film transistor.
17. The electronic element of claim 1 , wherein two or more of the vertical transistors positioned around the perimeter of the vertical-support-element are electrically connected to form a multi-transistor electronic component.
18. The electronic element of claim 17 , wherein the multi-transistor electronic component further includes a planar thin film transistor.
19. The electronic element of claim 17 , wherein the multi-transistor electronic component includes an inverter.
20. The electronic element of claim 19 , wherein the inverter is an enhancement-depletion-mode inverter in which the first electrode of a first vertical transistor is electrically connected to the first electrode of a second vertical transistor and the conformal conductive gate layer of the first vertical transistor, wherein the first vertical transistor is a top-gate transistor and the second vertical transistor is a bottom-gate transistor.
21. The electronic element of claim 19 , wherein the inverter is an all-enhancement-mode inverter in which a pair of series connected vertical transistors positioned around the perimeter of the vertical-support-element electrically connected to a planar thin film transistor.
22. The electronic element of claim 17 , wherein the multi-transistor electronic component is a logic gate.