WRITE BANDWIDTH ENHANCEMENT SCHEME IN PHASE CHANGE MEMORY
In an aspect of the disclosure, a method and an apparatus are provided. The apparatus may be a phase change memory (PCM). The PCM including, first and second phase change memory cells. The PCM including a bitline coupled to the first and the second phase change memory cells. The PCM including a memory controller configured to simultaneously write to the first and the second phase change memory cells by applying designated pulse waveforms to the bitline and wordlines.
1 . A phase change memory device, comprising:
first and second phase change memory cells;
a single bitline coupled to the first and the second phase change memory cells; and
bitline control circuitry configured to apply a pulse to the bitline to write to the first and the second phase change memory cells during a single pulse period.
2 . The phase change memory device of claim 1 , wherein the bitline control circuitry is further configured to write to the first and the second phase change memory cells simultaneously during the single pulse period when bits to be written to the first and the second phase change memory cells are the same.
3 . The phase change memory device of claim 1 , wherein the bitline control circuitry is further configured to write to the first and the second phase change memory cells sequentially during the single pulse period when bits to be written to the first and the second phase change memory cells are different.
4 . The phase change memory device of claim 1 , wherein the bitline control circuitry is configured to generate the pulse with a trailing edge having a slope dependent on bits to be written to the first and the second phase change memory cells.
5 . The phase change memory device of claim 1 , further comprising:
a first wordline coupled to the first phase change memory cell;
a second wordline coupled to the second phase change memory cell; and
wordline control circuitry configured to apply, during the single pulse period, a first pulse to the first wordline to write to the first phase change memory cell and a second pulse to the second wordline to write to the second phase change memory cell.
6 . The phase change memory device of claim 5 , wherein the wordline control circuitry are further configured to apply the first and the second pulses simultaneously during the single pulse period when bits to be written to the first and the second phase change memory cells are the same.
7 . The phase change memory device of claim 5 , wherein the wordline control circuitry are further configured to apply the first and the second pulses sequentially during the single pulse period when bits to be written to the first and the second phase change memory cells are different.
8 . The phase change memory device of claim 5 , wherein the wordline control circuitry are further configured to generate each of the first and the second pulses with a trailing edge having a slope dependent on bits to be written to the first and the second phase change memory cells.
9 . A phase change memory device, comprising:
first and second phase change memory cells;
a single bitline coupled to the first and the second phase change memory cells; and
bitline control circuitry configured to simultaneously write to the first and the second phase change memory cells when bits to be written to the first and the second phase change memory cells are the same.
10 . The phase change memory device of claim 9 wherein the bitline control circuitry is configured to apply a pulse to the single bitline to write to the first and the second phase change memory cells during a single pulse period.
11 . The phase change memory device of claim 10 wherein the bitline control circuitry is further configured to write to the first and the second phase change memory cells sequentially during the single pulse period when the bits to be written to the first and the second phase change memory cells are different.
12 . The phase change memory device of claim 10 , wherein the bitline control circuitry is further configured to generate the pulse with a trailing edge having a slope dependent on bits to be written to the first and the second phase change memory cell.
13 . The phase change memory device of claim 10 , further comprising:
a first wordline coupled to the first phase change memory cell;
a second wordline coupled to the second phase change memory cell; and
wordline control circuitry configured to apply a first pulse to the first wordline to enable the bitline control circuitry to write to the first phase change memory cell and a second pulse to the second wordline to enable the bitline control circuitry to write to the second phase change memory cell.
14 . The phase change memory device of claim 13 , wherein the wordline control circuitry are further configured to apply the first and the second pulses simultaneously when bits to be written to the first and the second phase change memory cells are the same.
15 . The phase change memory device of claim 13 , wherein the wordline control circuitry are further configured to apply the first and the second pulses sequentially when bits to be written to the first and the second phase change memory cells are different.
16 . The phase change memory device of claim 13 , wherein the wordline control circuitry are further configured to generate each of the first and the second pulse with a trailing edge having a slope dependent on bits to be written to the first and the second phase change memory cells.
17 . A phase change memory device, comprising:
first and second phase change memory cells;
bitline control circuitry;
a first wordline coupled to the first phase change memory cell;
a second wordline coupled to the second phase change memory cell, the first phase change memory cell and the second phase change memory cell coupled to a single bitline; and
wordline control circuitry configured to simultaneously apply a first pulse to the first wordline to write to the first phase change memory cell and a second pulse to the second wordline to write to the second phase change memory cell, when bits to be written to the first and the second phase change memory cells are the same.
18 . The phase change memory device of claim 17 , wherein the bitline control circuitry is configured to apply a pulse to the single bitline to write to the first and the second phase change memory cells during a single pulse period.
19 . The phase change memory device of claim 18 wherein the wordline control circuitry are configured to sequentially apply the first pulse to the first wordline and the second pulse to the second wordline during the single pulse period when the bits to be written to the first and the second phase change memory cells are different.
20 . The phase change memory device of claim 18 , wherein the bitline control circuitry is further configured to generate the pulse with a trailing edge having a slope dependent on bits to be written to the first and the second phase change memory cells.
21 . The phase change memory device of claim 17 , wherein the wordline control circuitry are further configured to generate each of the first and the second pulse with a trailing edge having a slope dependent on bits to be written to the first and the second phase change memory cells.