Manufacturing method of semiconductor device and semiconductor device
The performance of a solid state image sensor which is formed by performing divided exposure that exposes the entire chip by a plurality of times of exposure and in which each of a plurality of pixels arranged in a pixel array portion has a plurality of photodiodes is improved. In the divided exposure performed when the solid state image sensor is manufactured, a dividing line that divides an exposure region is defined to be located between a first photodiode and a second photodiode aligned in a first direction in an active region in a pixel and is defined to be along a second direction perpendicular to the first direction.
1. A semiconductor device including a solid state image sensor, the semiconductor device comprising:
a substrate including a first region and a second region adjacent to each other in an upper surface of the substrate;
a pixel including an active region partitioned by an element isolation structure in the upper surface of the substrate;
a first photodiode formed in the first region in the active region; and
a second photodiode formed separately from the first photodiode in the second region in the active region,
wherein, in the active region, a portion formed in the first region and a portion formed in the second region are formed to be shifted from each other in one direction in plan view, and
a level difference is formed in a layout of a periphery of the active region in plan view at a boundary between the first region and the second region.
2. The semiconductor device according to claim 1 ,
wherein the boundary extends in a first direction along a main surface of the substrate,
a plurality of the pixels are arranged in a second direction which is perpendicular to the first direction and which is along the main surface of the substrate, and
a distance between the first photodiode and the second photodiode in the pixel that overlaps with the boundary in plan view is greater than a distance between the first photodiode and the second photodiode in the pixel that does not overlap with the boundary in plan view.
3. The semiconductor device according to claim 2 ,
wherein a width of the first photodiode in the second direction in the pixel that overlaps with the boundary in plan view is smaller than a width of the first photodiode in the second direction in the pixel that does not overlap with the boundary in plan view.
4. The semiconductor device according to claim 3 ,
wherein a width of the second photodiode in the second direction in the pixel that overlaps with the boundary in plan view is smaller than a width of the second photodiode in the second direction in the pixel that does not overlap with the boundary in plan view.
5. The semiconductor device according to claim 1 ,
wherein a peripheral transistor that amplifies and outputs an electrical charge generated in the first photodiode and the second photodiode is provided in thepixel.