IP Library Granted Patent US 10,157,585
Granted Patent B2
US 10,157,585 · App. 15/349,255 · Granted Dec 18, 2018

Overdrive amplifier and semiconductor device

Inventor: Yutaka Saeki (Tokyo, JP)
Assignee: Synaptics Japan GK
G09G3/3648G09G3/3688G09G3/3696H03F3/45219H03F3/45636G09G2300/0819G09G2310/0291G09G2330/021H03F2203/45116H03F2203/45154H03F2203/45674
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Quick Facts
Patent No.
US 10,157,585
App. No.
15/349,255
Granted
Dec 18, 2018
Kind
B2
Abstract

The overdrive amplifier may include: a differential input circuit arranged by connecting, in a folded-cascode style, input transistors supplied with an input signal at gates, and feedback input transistors accepting the feedback of an output signal at respective gates; a current mirror load having mirror input current paths connected to current paths of the feedback input transistors, and mirror output current paths connected to current paths of the input transistors; an output circuit accepting the input of output control signals from the mirror output current paths of the current mirror load; and an overdrive circuit which causes bias currents of directions which boost an output of the output circuit, depending on the output control signals, to pass through the current mirror load based on the output control signals in an overdrive period.

Claims (73)

1. An overdrive amplifier comprising:

a differential input circuit comprising differential input transistor pairs arranged by connecting, in a folded-cascode style, input transistors supplied with an input signal at respective first gates, and feedback input transistors configured to accept a feedback of an output signal at respective second gates;

a current mirror load comprising mirror input current paths connected to current paths of the feedback input transistors and mirror output current paths connected to current paths of the input transistors;

an output circuit configured to receive output control signals from the mirror output current paths of the current mirror load, wherein the output circuit has output transistors receiving the output control signals at respective third gates; and

an overdrive circuit configured to generate bias currents which boost an output of the output circuit, depending on the output control signals, to pass through the current mirror load based on the output control signals during an overdrive period, wherein the overdrive circuit comprises overdrive transistors controlled in mutual conductance based on the output control signals, and switch transistors connected in series with the overdrive transistors, which are turned on in the overdrive period; and

the overdrive circuit is configured to generate each bias current to pass through at least one of the mirror input current paths of the current mirror load with a corresponding one of the switch transistors in an ON state.

2. The overdrive amplifier according to claim 1 , wherein the overdrive circuit further includes bias transistors connected in series with the overdrive transistors, and

the bias transistors have mutual conductances determined according to voltages of respective bias signals supplied at their gates.

3. The overdrive amplifier according to claim 2 , wherein the current mirror load includes a pMOS current mirror circuit connected between a floating current source and a high-potential power source, and an nMOS current mirror circuit connected between the floating current source and a low-potential power source,

the pMOS current mirror circuit comprising a pMOS mirror input transistor and a pMOS mirror output transistor which comprise respective fourth gates connected commonly and which are composed of p-channel type MOS transistors respectively, provided that the gate and drain of the pMOS mirror input transistor are connected to each other,

the nMOS current mirror circuit comprises an nMOS mirror input transistor and an nMOS mirror output transistor which comprise respective fifth gates connected commonly and which are composed of n-channel type MOS transistors respectively, provided that the gate and drain of the nMOS mirror input transistor are connected to each other, and

the output circuit comprises a push-pull output circuit arranged by connecting a pMOS output transistor composed of a p-channel type MOS transistor comprising a gate connected to a drain of the pMOS mirror output transistor of the pMOS current mirror circuit, and an nMOS output transistor composed of an n-channel type MOS transistor having a gate connected to a drain of the nMOS mirror output transistor of the nMOS current mirror circuit, in series with each other.

4. The overdrive amplifier according to claim 3 , wherein the overdrive circuit has a pMOS overdrive circuit connected between the drain of the pMOS mirror input transistor included in the pMOS current mirror circuit, and the high-potential power source, and an nMOS overdrive circuit connected between the drain of the nMOS mirror input transistor included in the nMOS current mirror circuit, and the low-potential power source,

the pMOS overdrive circuit comprising a pMOS overdrive transistor, a pMOS switch transistor and a pMOS bias transistor which are formed by p-channel type MOS transistors as the pMOS overdrive transistor, the pMOS switch transistor and the pMOS bias transistor, respectively, and

the nMOS overdrive circuit comprises, as the pMOS overdrive transistor, the pMOS switch transistor and the pMOS bias transistor, an nMOS overdrive transistor, an nMOS switch transistor and an nMOS bias transistor which are formed by n-channel type MOS transistors, respectively.

5. The overdrive amplifier according to claim 4 , wherein the pMOS switch transistor of the pMOS overdrive circuit accepts an input of an inverted signal of an overdrive control signal at its gate, and

the nMOS switch transistor of the nMOS overdrive circuit accepts an input of the overdrive control signal at its gate.

6. The overdrive amplifier according to claim 4 , wherein the pMOS switch transistor of the pMOS overdrive circuit accepts an input of a logical OR signal of an inverted signal of an overdrive control signal and a first switch control signal at its gate,

the nMOS switch transistor of the nMOS overdrive circuit accepts an input of a logical AND signal of the overdrive control signal and a second switch control signal at its gate,

the first switch control signal is a signal synchronously changing earlier than a gate signal of the pMOS output transistor composed of the p-channel type MOS transistor, and

the second switch control signal is a signal synchronously changing earlier than a gate signal of the nMOS output transistor composed of the n-channel type MOS transistor.

7. The overdrive amplifier according to claim 4 , wherein the differential input circuit comprises, as the differential input transistor pairs, a pMOS differential input transistor pair connected between the high-potential power source and the nMOS current mirror circuit, and an nMOS differential input transistor pair connected between the low-potential power source and the pMOS current mirror circuit,

the pMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistors, a pMOS input transistor and a pMOS feedback input transistor which are composed of p-channel type MOS transistors, respectively,

the pMOS input transistor has a drain connected to the drain of the nMOS mirror output transistor, and the pMOS feedback input transistor has a drain connected to the drain of the nMOS mirror input transistor,

the nMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistors, an nMOS input transistor and an nMOS feedback input transistor which are composed of n-channel type MOS transistors respectively, and

the nMOS input transistor has a drain connected to the drain of the pMOS mirror output transistor, and the nMOS feedback input transistor has a drain connected to the drain of the pMOS mirror input transistor.

8. The overdrive amplifier according to claim 4 , wherein one of the differential input transistor pairs of the differential input circuit is a pMOS differential input transistor pair connected between the high-potential power source and the nMOS current mirror circuit,

the pMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistors, a pMOS input transistor and a pMOS feedback input transistor composed of p-channel type MOS transistors, respectively,

the pMOS input transistor has a drain connected to the drain of the nMOS mirror output transistor, and

the pMOS feedback input transistor has a drain connected to the drain of the nMOS mirror input transistor.

9. The overdrive amplifier according to claim 4 , wherein one of the differential input transistor pairs of the differential input circuit comprises an nMOS differential input transistor pair connected between the low-potential power source and the pMOS current mirror circuit,

the nMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistor, an nMOS input transistor and an nMOS feedback input transistor composed of n-channel type MOS transistors, respectively,

the nMOS input transistor has a drain connected to the drain of the pMOS mirror output transistor, and

the nMOS feedback input transistor has a drain connected to the drain of the pMOS mirror input transistor.

10. The overdrive amplifier according to claim 3 , wherein the overdrive circuit comprises an nMOS overdrive circuit connected between the drain of the pMOS mirror input transistor included in the pMOS current mirror circuit and the low-potential power source, and a pMOS overdrive circuit connected between the drain of the nMOS mirror input transistor included in the nMOS current mirror circuit and the high-potential power source,

the pMOS overdrive circuit comprises, as one of the overdrive transistors, one of the switch transistors and one of the bias transistors, a pMOS overdrive transistor, a pMOS switch transistor and a pMOS bias transistor formed by p-channel type MOS transistors, respectively, and

the nMOS overdrive circuit comprises, as one of the overdrive transistors, one of the switch transistors and one of the bias transistors, an nMOS overdrive transistor, an nMOS switch transistor and an nMOS bias transistor formed by n-channel type MOS transistors respectively.

11. The overdrive amplifier according to claim 10 , wherein the pMOS switch transistor of the pMOS overdrive circuit is configured to receive an input of an inverted signal of an overdrive control signal at its gate, and

the nMOS switch transistor of the nMOS overdrive circuit is configured to receive an input of the overdrive control signal at its gate.

12. The overdrive amplifier according to claim 10 , wherein the pMOS switch transistor of the pMOS overdrive circuit is configured to receive an input of a logical OR signal of an inverted signal of an overdrive control signal and a first switch control signal at its gate,

the nMOS switch transistor of the nMOS overdrive circuit is configured to receive an input of a logical AND signal of the overdrive control signal and a second switch control signal at its gate,

the first switch control signal is a signal synchronously changing earlier than a gate signal of the pMOS output transistor composed of the p-channel type MOS transistor, and

the second switch control signal is a signal synchronously changing earlier than a gate signal of the nMOS output transistor composed of the n-channel type MOS transistor.

13. The overdrive amplifier according to claim 10 , wherein the differential input circuit comprises, as the differential input transistor pairs, a pMOS differential input transistor pair connected between the high-potential power source and the nMOS current mirror circuit, and an nMOS differential input transistor pair connected between the low-potential power source and the pMOS current mirror circuit,

the pMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistors, a pMOS input transistor and a pMOS feedback input transistor composed of p-channel type MOS transistors, respectively,

the pMOS input transistor has a drain connected to the drain of the nMOS mirror output transistor,

the pMOS feedback input transistor has a drain connected to the drain of the nMOS mirror input transistor,

the nMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistors, an nMOS input transistor and an nMOS feedback input transistor composed of n-channel type MOS transistors, respectively,

the nMOS input transistor has a drain connected to the drain of the pMOS mirror output transistor, and

the nMOS feedback input transistor has a drain connected to the drain of the pMOS mirror input transistor.

14. The overdrive amplifier according to claim 10 , wherein one of the differential input transistor pairs of the differential input circuit comprises a pMOS differential input transistor pair connected between the high-potential power source and the nMOS current mirror circuit,

the pMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistors, a pMOS input transistor and a pMOS feedback input transistor composed of p-channel type MOS transistors respectively,

the pMOS input transistor has a drain connected to the drain of the nMOS mirror output transistor, and

the pMOS feedback input transistor has a drain connected to the drain of the nMOS mirror input transistor.

15. The overdrive amplifier according to claim 10 , wherein one of the differential input transistor pairs of the differential input circuit comprises an nMOS differential input transistor pair connected between the low-potential power source and the pMOS current mirror circuit,

the nMOS differential input transistor pair comprises, as one of the input transistors and the feedback input transistors, an nMOS input transistor and an nMOS feedback input transistor composed of n-channel type MOS transistors respectively,

the nMOS input transistor has a drain connected to the drain of the pMOS mirror output transistor, and

the nMOS feedback input transistor has a drain connected to the drain of the pMOS mirror input transistor.

16. A semiconductor device formed on a semiconductor substrate, comprising a plurality of overdrive amplifiers operated in parallel,

wherein the overdrive amplifiers each comprise: a differential input circuit comprising differential input transistor pairs arranged by connecting, in a folded-cascode style, input transistors supplied with an input signal at respective first gates and feedback input transistors accepting a feedback of an output signal at respective second gates;

a current mirror load comprises mirror input current paths connected to current paths of the feedback input transistors, and mirror output current paths connected to current paths of the input transistors;

an output circuit configured to receive the input of output control signals from the mirror output current paths of the current mirror load, wherein the output circuit comprises output transistors receiving the output control signals at respective third gates; and

an overdrive circuit configured to generate bias currents which boost an output of the output circuit, depending on the output control signals, to pass through the current mirror load based on the output control signals during an overdrive period,

the overdrive circuit comprising overdrive transistors controlled in mutual conductance based on the output control signals, and switch transistors connected in series with the overdrive transistors respectively, which are turned on in the overdrive period, and

the overdrive circuit is configured to generate each bias current to pass through at least one of the mirror input current paths of the current mirror load with the corresponding switch transistor in ON state.

17. The semiconductor device according to claim 16 , further comprising

a control register,

wherein the overdrive circuit further comprises bias transistors connected in series with the overdrive transistors, respectively,

the bias transistors have mutual conductances determined according to voltages of respective bias signals supplied at their gates, and

control data determining voltages of the respective bias signals are overwritably set in the control register.

18. The semiconductor device according to claim 17 , further comprising a source driver operable to output gradation voltage signals according to display data in parallel in synchronization with a display timing,

wherein the source driver comprises the plurality of overdrive amplifiers, and

each overdrive amplifier comprises a buffer amplifier operable to output a respective one of the gradation voltage signals from a corresponding external terminal to outside the semiconductor device.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 20, 2024
From: SYNAPTICS JAPAN GK
To: SYNAPTICS INCORPORATED
Reel/Frame 067793/0211 →
SECURITY INTEREST Recorded Sep 27, 2017
From: SYNAPTICS INCORPORATED
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 044037/0896 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 11, 2016
From: SAEKI, YUTAKA
To: SYNAPTICS DISPLAY DEVICES GK
Reel/Frame 040288/0901 →
CHANGE OF NAME Recorded Nov 11, 2016
From: SYNAPTICS DISPLAY DEVICES GK
To: SYNAPTICS JAPAN GK
Reel/Frame 040289/0404 →
Priority Claims (1)
JP 2015-225452 · Nov 18, 2015 · national
Continuity (1)
Related Publication 20170140725A1 · May 18, 2017