Detection of X-ray beam start and stop
A radiographic energy detecting pixel generates charges in a photosensor in response to photon impacts. A switch electrically connected to the photosensor selectively transmits collected charges to a data line. A sensing circuit electrically connected to the photosensor detects a rate of accumulation of the charges in the photosensor.
1. A radiographic energy detecting pixel circuit comprising:
a photosensor for generating charges in response to photons impacting the photosensor;
a data line;
a controllable switching device electrically connected to the photosensor and to the data line for selectively transmitting charges from the photosensor to the data line;
a sensing circuit electrically connected to the photosensor to measure a rate of charge generation in the photosensor,
wherein the photosensor comprises a photodiode, the switching device comprises a TFT, one terminal of the photosensor comprises a cathode, the TFT and the sensing circuit are electrically connected to the cathode, the cathode is further electrically connected to a drain terminal of the TFT, another terminal of the photosensor comprises an anode, and wherein the anode is electrically connected to a bias voltage supply; and
a sensing capacitor electrically connected between the cathode and the sensing circuit.
2. The pixel circuit of claim 1 , wherein the sensing circuit comprises a current sensing circuit or a charge sensing circuit to measure a change in charge or current over time.
3. The pixel circuit of claim 2 , wherein the sensing circuit measures a change in an amount of charge generated in the photosensor.
4. The pixel circuit of claim 3 , wherein the sensing circuit comprises an operational amplifier, a feedback capacitor electrically connecting an output and an input of the operational amplifier, the sensing capacitor is electrically connected to the feedback capacitor, and wherein the sensing circuit transmits a signal when a rate of charge varying over time as detected by the sensing circuit exceeds a threshold.
5. The pixel circuit of claim 3 , wherein the sensing circuit transmits a signal when an amount of current generated by accumulating charges varies over time beyond a threshold.
6. A radiographic detector comprising:
a substrate;
a plurality of dielectric layers over the substrate;
an array of photosensors formed in a device layer over the dielectric layers for generating charges in response to photons impacting the photosensors, each of the photosensors comprising an anode, a cathode, and a charge collecting layer therebetween;
a data line formed over the substrate substantially parallel to and adjacent to a first side of a first portion of the photosensors;
a gate line formed over the substrate, under a first one of the dielectric layers, over a second one of the dielectric layers, and substantially parallel to a second side of a second portion of the photosensors different from the first portion of the photosensors and perpendicular to the data line;
a switching device formed over the gate line, the switching device for selectively electrically connecting the cathode to the data line under control of the gate line; and
a sense electrode formed over the substrate and under the photosensor, the sense electrode separated from the photosensor by the first one and the second one of the dielectric layers, and
wherein the sense electrode is electrically linked to the photosensor by a capacitance therebetween, and wherein the sense electrode is formed under the first one and the second one of the dielectric layers.
7. A radiographic detector comprising:
a substrate;
a plurality of dielectric layers over the substrate;
an array of photosensors formed in a device layer over the dielectric layers for generating charges in response to photons impacting the photosensors, each of the photosensors comprising an anode, a cathode, and a charge collecting layer therebetween;
a data line formed over the substrate substantially parallel to and adjacent to a first side of a first portion of the photosensors;
a gate line formed over the substrate and under one of the dielectric layers substantially parallel to a second side of a second portion of the photosensors different from the first portion of the photosensors and perpendicular to the data line;
a switching device formed over the gate line, the switching device for selectively electrically connecting the cathode to the data line under control of the gate line; and
a sense electrode formed over the substrate and under the photosensor, the sense electrode separated from the photosensor by one or more of the dielectric layers,
wherein the sense electrode is electrically linked to the photosensor by a capacitance therebetween, the gate line and the sense electrode are formed under a common dielectric layer, the sense electrode is disposed under the second portion of the photosensors different from the first portion of the photosensors, the photosensors each comprise a photodiode, one terminal of the photodiodes each comprise a cathode, another terminal of the photodiodes each comprise an anode, the capacitance links the cathode to the sense electrode, a bias voltage supply is electrically connected to the anodes, and wherein the sense electrode is electrically connected to a sensing circuit comprising a current sensing circuit or a charge sensing circuit to measure a rate of charge generation over time in the photosensor.
8. The detector of claim 7 , wherein the sensing circuit transmits a signal when the rate of charge generation varies over time beyond a threshold.