TRANSIENT WAVELENGTH DRIFT REDUCTION IN SEMICONDUCTOR LASERS

1 . A laser assembly comprising a semiconductor laser and a drive unit for driving the semiconductor laser,

wherein the semiconductor laser comprises:

a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region;

a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region,

wherein the drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.

wherein the drive unit is configured to generate the first drive current on the basis of an input signal comprising a data signal indicative of data to be transmitted by means of the optical signal; and

wherein the drive unit comprises:

a drive circuit for generating the first drive current based on the data signal;

an averaging circuit for generating an envelope of the data signal; and

a pulse generator for generating the second drive current on the basis of the envelope of the data signal.

2 . The laser assembly according to claim 1 , wherein the heating region is configured to have characteristics of heat generation that are matched to those of the first semiconductor region.

3 . The laser assembly according to claim 1 , wherein the heating region has substantially the same shape and material composition as the first semiconductor region.

4 . The laser assembly according to claim 1 , wherein the heating region comprises a second semiconductor region, a parallel waveguide or a metallic heater made of resistive material.

5 . The laser assembly according to claim 1 , wherein the heating region is arranged so that heat generated by the heating region may diffuse to the first semiconductor region and heat up the first semiconductor region.

6 . The laser assembly according to claim 5 , wherein the characteristics of heat generation of the heating region are chosen in such a manner that a heat transfer from the heating region to the first semiconductor region during the intervals between successive transmission periods is dimensioned so that a temperature of the first semiconductor region during the intervals between successive periods of transmission is kept at the same level as during the transmission periods.

7 . The laser assembly according to claim 1 , wherein the heating region is optically inactive and/or is optically insulated from the first semiconductor region.

8 . The laser assembly according to claim 1 , wherein the semiconductor laser further comprises another heating region that is electrically insulated from the first semiconductor region and arranged in proximity to the first semiconductor region such that the first semiconductor region is sandwiched between the heating region and the another heating region; and

wherein the drive unit is further configured to apply a third drive current to the another heating region in the intervals between successive transmission periods.

9 . The laser assembly according to claim 8 , wherein the another heating region is arranged so that heat generated by the another heating region may diffuse to the first semiconductor region and heat up the first semiconductor region.

10 . The laser assembly according to claim 9 , wherein the characteristics of heat generation of the heating region and the another heating region are chosen in such a manner that a heat transfer from the heating region and the another heating region to the first semiconductor region during the intervals between successive transmission periods is dimensioned to keep a temperature of the first semiconductor region during the intervals between successive periods of transmission at the same level as during the transmission periods.

11 . The laser assembly according to claim 1 , wherein the drive unit is configured to generate the second drive current such that the second drive current is different from zero during at least a portion of each of the intervals between successive transmission periods.

12 . A method of driving a semiconductor laser having a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region, wherein the heating region is configured to have characteristics of heat generation that are matched to those of the first semiconductor region, the method comprising:

generating the first drive current on the basis of a data signal indicative of data to be transmitted by means of the optical signal;

generating an envelope of the data signal;

generating the second drive current on the basis of the envelope of the data signal;

applying the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser; and

applying a second drive current to the heating region in the intervals between successive transmission periods.

13 . The method according to claim 12 , wherein the heating region comprises a second semiconductor region, a parallel waveguide or a metallic heater made of resistive material.

14 . The method according to claim 12 ,

wherein the semiconductor laser further comprises another heating region that is electrically insulated from the first semiconductor region and arranged in proximity to the first semiconductor region such that the first semiconductor region is sandwiched between the heating region and the another heating region; and

wherein the method further comprises applying a third drive current to the another heating region in the intervals between successive transmission periods.