Thin film transistor substrate
A thin film transistor substrate includes: a plurality of pixels arranged in a matrix, each of the pixels including: a thin film transistor including: a gate electrode made of a metal and disposed on the substrate; a gate insulating film covering at least the gate electrode; a semiconductor layer including an oxide semiconductor provided at a position facing the gate electrode with the gate insulating film interposed therebetween; a source electrode and a drain electrode in contact with the semiconductor layer; and an interlayer insulating film provided on at least the semiconductor layer, the source electrode, and the drain electrode; and a pixel electrode electrically connected to the drain electrode. The gate electrode has hydrogen occlusion capability of 2.5×10 20 to 2×10 22 atoms/cm 3 , and the semiconductor layer has a hydrogen concentration of 1×10 16 atoms/cm 3 or less.
1. A thin film transistor substrate comprising:
a plurality of pixels arranged in a matrix,
each of the pixels including:
a thin film transistor including:
a gate electrode made of a metal and disposed on the substrate;
a gate insulating film covering at least the gate electrode;
a semiconductor layer including an oxide semiconductor provided at a position facing the gate electrode with the gate insulating film interposed therebetween;
a source electrode and a drain electrode in contact with the semiconductor layer; and
an interlayer insulating film provided on at least the semiconductor layer, the source electrode, and the drain electrode; and
a pixel electrode electrically connected to the drain electrode,
wherein the gate electrode has hydrogen occlusion capability of 2.5×10 20 to 2×10 22 atoms/cm 3 ,
the semiconductor layer has a hydrogen concentration of 1×10 16 to 3×10 20 atoms/cm 3 , and
the gate electrode includes an Al alloy and N.
2. The thin film transistor substrate according to claim 1 , wherein the gate electrode includes a lamination film obtained by laminating an AlNiNdN film on an AlNiNd film.
3. The thin film transistor substrate according to claim 1 , wherein the oxide semiconductor is a metal oxide containing at least indium, gallium, and zinc.
4. The thin film transistor substrate according to claim 1 , wherein
the gate insulating film includes a lamination film obtained by laminating an SiO film on an SiN film, and
a hydrogen concentration in the SiN film is equal to or less than 3×10 21 atoms/cm 3 .
5. The thin film transistor substrate according to claim 1 , wherein
the thin film transistor further includes a protective insulating film covering the semiconductor layer, and
the source electrode and the drain electrode are in contact with the semiconductor layer through contact holes that pass through the protective insulating film.
6. A thin film transistor substrate comprising:
a plurality of pixels arranged in a matrix,
each of the pixels including:
a thin film transistor including:
a gate electrode made of a metal and disposed on the substrate;
a gate insulating film covering at least the gate electrode;
a semiconductor layer including an oxide semiconductor provided at a position facing the gate electrode with the gate insulating film interposed therebetween;
a source electrode and a drain electrode in contact with the semiconductor layer; and
an interlayer insulating film provided on at least the semiconductor layer, the source electrode, and the drain electrode; and
a pixel electrode electrically connected to the drain electrode,
wherein the gate electrode has hydrogen occlusion capability of 2.5×10 20 to 2×10 22 atom s/cm 3 ,
the semiconductor layer has a hydrogen concentration of 1×10 16 to 3×10 20 atoms/cm 3 ,
wherein the thin film transistor includes a control electrode made of a metal and provided above the semiconductor layer with the interlayer insulating film interposed therebetween, the control electrode being provided with potential different from the gate electrode or potential common to the gate electrode,
the control electrode has hydrogen occlusion capability of 2.5×10 20 to 2×10 22 atoms/cm 3 , and
the gate electrode and the control electrode include an Al alloy and N.
7. The thin film transistor substrate according to claim 6 , wherein
the gate electrode includes a lamination film obtained by laminating an AlNiNdN film on an AlNiNd film, and
the control electrode includes a lamination film obtained by laminating an AlNiNd film on an AlNiNdN film.
8. The thin film transistor substrate according to claim 6 , wherein the oxide semiconductor is a metal oxide containing at least indium, gallium, and zinc.
9. The thin film transistor substrate according to claim 6 , wherein
the gate insulating film includes a lamination film obtained by laminating an SiO film on an SiN film, and
a hydrogen concentration in the SiN film is equal to or less than 3×10 21 atoms/cm 3 .
10. The thin film transistor substrate according to claim 6 , wherein
the thin film transistor further includes a protective insulating film covering the semiconductor layer, and
the source electrode and the drain electrode are in contact with the semiconductor layer through contact holes that pass through the protective insulating film.