IP Library Granted Patent US 10,177,137
Granted Patent B1
US 10,177,137 · App. 15/891,586 · Granted Jan 8, 2019

Electrostatic discharge protection apparatus

Inventors: Federico Agustin Altolaguirre (Hsinchu Hsien, TW); Yen-Hung Yeh (Hsinchu Hsien, TW); Po-Ya Lai (Hsinchu Hsien, TW)
Assignee: MSTAR SEMICONDUCTOR, INC.
H01L27/0281H01L27/0255H01L27/0288H01L27/0292
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Quick Facts
Patent No.
US 10,177,137
App. No.
15/891,586
Granted
Jan 8, 2019
Kind
B1
Abstract

An electrostatic discharge (ESD) protection apparatus is provided. A first power rail provides first reference voltage. A second power rail provides a second reference voltage. A detection circuit generates a detection result according to whether ESD stress occurs on the first power rail. A first N-type MOSFET has its gate serving as a control terminal. A second N-type MOSFET has its gate serving as a second control node. An intermediate power rail provides an intermediate voltage between the first and the second reference voltages. A first switching circuit couples the first control node to the intermediate power rail or to the first power rail according to the detection result. A second switching circuit couples the second control node to the second power rail or to the first control node according to the detection result.

Claims (24)

1. An electrostatic discharge (ESD) protection apparatus, comprising:

a first power rail, providing a first reference voltage;

a second power rail, providing a second reference voltage;

a detection circuit, generating a detection result according to whether electrostatic discharge (ESD) stress occurs on the first power rail;

a first N-type metal-oxide semiconductor field-effect transistor (MOSFET), having a drain thereof coupled to the first power rail, a source thereof coupled to a common node, and a gate thereof serving as a first control node;

a second N-type MOSFET, having a drain thereof coupled to the common node, a drain thereof coupled to the second power rail, and a gate thereof serving as a second control node;

an intermediate power rail, providing an intermediate voltage between the first reference voltage and the second reference voltage;

a first switching circuit, electrically coupled between the first power rail and the intermediate power rail, causing the first control node to be coupled to the intermediate power rail or to the first power rail according to the detection result; and

a second switching circuit, electrically coupled between the first control node and the second power rail, causing the second control node to be coupled to the second power rail or to the first control node according to the detection result.

2. The ESD protection apparatus according to claim 1 , wherein the first switching circuit comprises:

a first inverter, comprising a power supply end, a ground end, an input end and an output end, the input end thereof receiving the detection result, the output end thereof coupled to the first control node, the power supply end thereof coupled to the first power rail, and the ground end thereof coupled to the intermediate power rail.

3. The ESD protection apparatus according to claim 1 , wherein the second switching circuit comprises:

a second inverter, comprising a power supply end, a ground end, an input end and an output end, the input end thereof receiving the detection result, the power supply end thereof coupled to the first control node, and the ground end thereof coupled to the second power rail; and

a third inverter, comprising a power supply end, a ground end, an input end and an output end, the input end thereof coupled to the output end of the second inverter, the output end thereof coupled to the second control node, the power supply end thereof coupled to the first control node, and the ground end thereof coupled to the second power rail.

4. The ESD protection apparatus according to claim 1 , wherein the detection circuit comprises:

a first resistor, coupled between the first power rail and a first node;

a second resistor, coupled between the second power rail and a second node; and

a capacitor, coupled between the first node and the second node;

wherein, when ESD stress occurs on the first power rail, the detection circuit detects a first voltage drop between two ends of the first resistor, and detects a second voltage drop between two ends of the second resistor, the detection result comprises the first voltage drop and the second voltage drop, the first voltage drop is provided to the first switching circuit, and the second voltage drop is provided to the second switching circuit.

5. The ESD protection apparatus according to claim 4 , wherein the capacitor is implemented by one or more MOSFETs, and the detection circuit further comprises:

one or more diodes, serially connected between the first node and the capacitor.

6. The ESD protection apparatus according to claim 5 , wherein the one or more diodes are coupled to the capacitor via an intermediate node, and the intermediate power rail is branched from the intermediate node to accordingly generate the intermediate voltage.

7. The ESD protection apparatus according to claim 1 , further comprising:

a plurality of resistors, coupled between the first power rail and the second power rail, providing a divided voltage thereof as the intermediate voltage.

Assignments (2)
MERGER Recorded Jun 12, 2020
From: MSTAR SEMICONDUCTOR, INC.
To: MEDIATEK INC.
Reel/Frame 052931/0468 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2018
From: ALTOLAGUIRRE, FEDERICO AGUSTIN; YEH, YEN-HUNG; LAI, PO-YA
To: MSTAR SEMICONDUCTOR, INC.
Reel/Frame 044868/0238 →
Priority Claims (1)
TW 106146063 A · Dec 27, 2017 · national
Cited By (5)
US 12,494,635 US 12,519,307 US 12,549,001 US 12,627,138 US 12,712,357