IP Library Granted Patent US 10,276,284
Granted Patent B2
US 10,276,284 · App. 15/899,415 · Granted Apr 30, 2019

Methods and apparatus for preparing power transmission cables

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,276,284
App. No.
15/899,415
Granted
Apr 30, 2019
Kind
B2
Abstract

A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

Claims (21)

1. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, and a cable jacket surrounding the semiconductive layer, the method comprising:

cutting away an end section of the cable jacket to expose the semiconductive layer; thereafter

cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter

removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

2. The method of claim 1 wherein the insulation layer is formed of ethylene propylene rubber (EPR).

3. The method of claim 1 including rotating the grinding surface circumferentially around the cable while rotating the grinding surface in contact with the semiconductive layer.

4. The method of claim 1 wherein the grinding surface is formed of tungsten carbide.

5. The method of claim 1 including rotating the grinding surface using a power driver.

6. The method of claim 5 including releasably coupling the power driver and the grinding surface to the cable using a mounting tool.

7. The method of claim 1 including:

cutting a circumferential preliminary groove in the semiconductive layer using the rotating grinding surface at an axial position along the cable, the preliminary groove having a first depth; and thereafter

cutting the dividing groove into the semiconductive layer within the preliminary groove at the axial position.

8. The method of claim 1 wherein the dividing groove extends fully through the semiconductive layer so that a segment of the polymeric insulation layer is exposed between the first and second semiconductive sections and through the dividing groove.

9. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, the method comprising:

cutting a circumferential preliminary groove in the semiconductive layer using a rotating grinding surface at an axial position along the cable, the preliminary groove having a first depth; thereafter

cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer within the preliminary groove at the axial position using the rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter

removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

10. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, the method comprising:

cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter

removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer;

wherein the dividing groove extends fully through the semiconductive layer so that a segment of the polymeric insulation layer is exposed between the first and second semiconductive sections and through the dividing groove.

Assignments (3)
MERGER Recorded Apr 28, 2022
From: TE CONNECTIVITY SERVICES GMBH
To: TE CONNECTIVITY SOLUTIONS GMBH
Reel/Frame 060885/0482 →
CHANGE OF ADDRESS Recorded Jun 7, 2021
From: TE CONNECTIVITY SERVICES GMBH
To: TE CONNECTIVITY SERVICES GMBH
Reel/Frame 056514/0015 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2021
From: TE CONNECTIVITY CORPORATION
To: TE CONNECTIVITY SERVICES GMBH
Reel/Frame 056514/0048 →