Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion.
1. A semiconductor manufacturing apparatus comprising:
a supporter configured to support a wafer;
a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion, wherein the first portion has an annular shape, and the second portion has a cylindrical shape;
a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion, wherein the second region is positioned on a side of a periphery portion of the wafer with respect to the first region, the third portion has an annular shape surrounding the first portion, and the fourth portion has a cylindrical shape surrounding the second portion;
a rotator configured to rotate the first member and to rotate the second member independently of the first member;
a first liquid feeder configured to feed a first liquid for processing the wafer to the first region;
a first gas feeder configured to feed a first gas between the wafer and the first portion;
a second gas feeder configured to feed a second gas between the wafer and the second portion; and
a second liquid feeder configured to feed a second liquid to the wafer, wherein the second liquid feeder includes an upper face feeder configured to feed the second liquid to the second region of the upper face of the wafer, and, in addition to the upper face feeder, a lower face feeder configured at a lower face of the wafer to feed the second liquid to the lower face of the wafer, and the upper and lower face feeders feed the second liquid to an edge portion of the wafer, wherein
the first and second portions are disposed to fill a space above the first region with the first gas, and
the second, third and fourth portions are disposed to fill a space above the second region with the second gas.
2. The apparatus of claim 1 , wherein
the first liquid feeder feeds the first liquid for etching a film on the wafer,
the first gas feeder feeds the first gas for increasing a rate of the etching,
the second gas feeder feeds the second gas for decreasing or increasing the rate of the etching; and
the second liquid feeder feeds the second liquid for suppressing the etching.
3. The apparatus of claim 1 , wherein the first and second gas feeders respectively feed the first and second gases that contain an etchant same as an etchant in the first liquid.
4. The apparatus of claim 3 , further comprising:
a first adjuster configured to adjust a concentration of the etchant in the first gas; and
a second adjuster configured to adjust a concentration of the etchant in the second gas.
5. The apparatus of claim 1 , wherein
an end of a nozzle of the first liquid feeder is disposed at a position that is closer to the wafer than a position of an end of a nozzle of the first gas feeder,
an end of a nozzle of the upper face feeder in the second liquid feeder is disposed at a position that is closer to the wafer than a position of an end of a nozzle of the second gas feeder,
an end of a nozzle of the lower face feeder in the second liquid feeder is disposed at a position that is closer to a center of the wafer than the position of the end of the nozzle of the upper face feeder in the second liquid feeder, and more distant from the center of the wafer than the position of the end of the nozzle of the first liquid feeder,
an end of the second portion is disposed at a position that is closer to the wafer than the position of the end of the nozzle of the first liquid feeder, and
an end of the fourth portion is disposed at a position that is closer to the wafer than the position of the end of the nozzle of the upper face feeder in the second liquid feeder.
6. The apparatus of claim 1 , wherein
an end of a nozzle of the first liquid feeder and an end of a nozzle of the first gas feeder are positioned at a first place that is in a vicinity of a center portion of the wafer,
an end of a nozzle of the upper face feeder in the second liquid feeder and an end of a nozzle of the second gas feeder are positioned at a second place that is on a side of the periphery portion of the wafer with respect to the first region, and
the apparatus comprises, as a pair of the end of the nozzle of the upper face feeder in the second liquid feeder and the end of the nozzle of the second gas feeder, a plurality of pairs at a plurality of second places that are positioned on a same circle.