RECONSTITUTED INTERPOSER SEMICONDUCTOR PACKAGE
A reconstituted semiconductor package and a method of making a reconstituted semiconductor package are described. An array of die-attach substrates is formed onto a carrier. A semiconductor device is mounted onto a first surface of each of the die-attach substrates. An interposer substrate is mounted over each of the semiconductor devices. The interposer substrates are electrically connected to the first surface of the respective die-attach substrates. A molding compound is filled in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages. Electrical connections are mounted to a second surface of the die-attach substrates. The array of reconstituted semiconductor packages is singulated through the molding compound between each of the die-attach substrates and respective mounted interposer substrates.
1 . A reconstituted interposer package comprising:
an interposer substrate electrically mounted to a first surface of a reconstituted die-attach substrate and straddling an integrated circuit mounted on the first surface of the reconstituted die-attach substrate;
a molding compound filled within open spaces between the interposer substrate and the first surface of the reconstituted die-attach substrate, wherein singulated surfaces of the molding compound reside along edges of the interposer substrate and the reconstituted die-attach substrate; and
external electrical connections formed in a grid array on a second surface of the reconstituted die-attach substrate.
2 . The reconstituted interposer package of claim 1 , wherein one or more of the reconstituted interposer packages are assembled into one of a baseband microprocessor, a set-top-box microprocessor, a server message block microprocessor, or an encryption/security microprocessor.
3 . The reconstituted semiconductor package of claim 1 , wherein the molding compound covers side walls of the reconstituted die-attach substrate and the interposer substrate.
4 . The reconstituted semiconductor package of claim 1 , wherein neither the reconstituted die-attach substrate nor the interposer substrate are traversed during singulation.
5 . The reconstituted semiconductor package of claim 1 , further comprising an interposer package-on-package.
6 . The reconstituted semiconductor package of claim 1 , wherein a size of the interposer substrate is different from a size of the reconstituted die-attach substrate.
7 . A reconstituted interposer package comprising:
an interposer substrate electrically mounted to a first surface of a reconstituted die-attach substrate and straddling an integrated circuit mounted on the first surface of the reconstituted die-attach substrate;
a molding compound filled within open spaces between the interposer substrate and the first surface of the reconstituted die-attach substrate; and
electrical connections formed in a grid array on a second surface of the reconstituted die-attach substrate.
8 . The reconstituted semiconductor package of claim 7 , wherein the molding compound covers side walls of the reconstituted die-attach substrate and the interposer substrate.
9 . The reconstituted semiconductor package of claim 7 , wherein one or more of the reconstituted interposer packages are assembled into one of a baseband microprocessor, a set-top-box microprocessor, a server message block microprocessor, or an encryption/security microprocessor.
10 . The reconstituted semiconductor package of claim 7 , further comprising an interposer package-on-package.
11 . The reconstituted semiconductor package of claim 7 , wherein a size of the interposer substrate is different from a size of the reconstituted die-attach substrate.
12 . A method of forming a semiconductor package, comprising:
forming an array of die-attach substrates;
mounting a semiconductor device onto a first surface of each of the die-attach substrates;
forming solder ball or conductor post connections to a plurality of interposer substrates;
mounting each interposer substrate over a respective semiconductor device;
electrically connecting the interposer substrates to the first surface of the respective die-attach substrates, via the solder ball or conductor post connections;
filling a molding compound in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages;
mounting electrical connections to a second surface of the die-attach substrates; and
singulating the array of reconstituted semiconductor packages through the molding compound between each of the die-attach substrates and respective mounted interposer substrates.
13 . The method of claim 12 , wherein the array of reconstituted semiconductor packages comprises a gap between each of the die-attach substrates and their respective mounted interposer substrates.
14 . The method of claim 13 , wherein the singulation does not cut through either the die-attach substrates or the mounted interposer substrates.
15 . The reconstituted semiconductor package of claim 13 , wherein the molding compound fills the gaps between each of the die-attach substrates and their respective mounted interposer substrates.
16 . The reconstituted semiconductor package of claim 12 , wherein the singulation cuts through the die-attach substrates.
17 . The reconstituted semiconductor package of claim 12 , wherein the singulation cuts through the interposer substrates.
18 . The method of claim 12 , further comprising:
forming the array of die-attach substrates onto an adhesive tape carrier.
19 . The method of claim 18 , further comprising:
exposing portions of the adhesive tape carrier through a solder mask to form a solder stencil.
20 . The method of claim 19 , further comprising:
forming solder electrical connections within the exposed portions of the solder stencil.