Coaxial-interconnect structure for a semiconductor component
The present disclosure describes a coaxial-interconnect structure that is integrated into a semiconductor component and methods of forming the coaxial-interconnect structure. The coaxial interconnect-structure, which electrically couples circuitry of an integrated-circuit (IC) die to traces of a packaging substrate, comprises a signal core elongated about an axis, a ground shield elongated about the axis, and an insulator disposed between the signal core and the ground shield.
1. A semiconductor component comprising:
a packaging substrate having complementary signal and ground traces that are formed at separate conductive layers of the packaging substrate;
an integrated-circuit (IC) die having complementary signal and ground pads; and
a coaxial-interconnect structure, the coaxial-interconnect structure being configured to electrically couple the complementary signal and ground pads of the IC die to the complementary signal and ground traces of the packaging substrate, wherein at least two elements of the coaxial-interconnect structure are deposited onto the complementary signal and ground pads of the IC die, the elements of the coaxial-interconnect structure comprising:
a signal core elongated about an axis that is (i) orthogonal to a plane of the IC die that contains the signal and ground pads and (ii) orthogonal to a plane of the packaging substrate that contains the corresponding signal and ground traces;
a ground shield elongated about the axis and disposed such that the ground shield encloses a perimeter of the signal core; and
an insulator disposed between the signal core and the ground shield.
2. The semiconductor component as recited in claim 1 , wherein the packaging substrate is a multiple-layer printed circuit board (PCB).
3. The semiconductor component as recited in claim 2 , where the multiple-layer printed circuit board (PCB) is formed from composite fiber-based epoxy materials and includes multiple layers of copper or aluminum.
4. The semiconductor component as recited in claim 1 , wherein the packaging substrate is a silicon interposer that has through-silicon (TSV) interconnects.
5. The semiconductor component as recited in claim 1 , wherein the integrated-circuit die is a memory die that is a dynamic random-access memory (DRAM) die or a flash memory die.
6. The semiconductor component as recited in claim 1 , wherein the integrated-circuit die is a logic die.
7. The semiconductor component as recited in claim 1 , wherein the integrated-circuit die is a system-on-chip (SoC) die.
8. The semiconductor component as recited in claim 1 , wherein the signal core is copper (Cu) material.
9. The semiconductor component as recited in claim 1 , wherein the signal core is a titanium (Ti) or a tungsten (W) material.
10. The semiconductor component as recited in claim 1 , wherein the insulator is a polyimide (PI) material, a polybenzoxazole (PBO) material, or a borophosphosilicate glass (BPS G) material.
11. The semiconductor component as recited in claim 1 , wherein the insulator is a material that is in a gaseous phase.
12. The semiconductor component as recited in claim 1 , wherein the ground shield is a copper (Cu) material.
13. The semiconductor component as recited in claim 1 , wherein the ground shield is a tin (Sn) material.
14. A semiconductor component comprising:
a packaging substrate having complementary signal and ground traces that are formed at a common conductive layer of the packaging substrate;
an integrated-circuit (IC) die having complementary signal and ground pads; and
a coaxial-interconnect structure, the coaxial-interconnect structure being configured to electrically couple the complementary signal and ground pads of the IC die to the complementary signal and ground traces of the packaging substrate, wherein at least two elements of the coaxial-interconnect structure are deposited onto the complementary signal and ground pads of the IC die, the elements of the coaxial-interconnect structure comprising:
a signal core elongated about an axis that is (i) orthogonal to a plane of the IC die that contains the signal and ground pads and (ii) orthogonal to planes of the packaging substrate that contain the corresponding signal and ground traces;
a ground shield elongated about the axis and disposed such that the ground shield encloses a portion of a perimeter encircling the signal core; and
an insulator disposed between the signal core and the ground shield.
15. The semiconductor component as recited in claim 14 , wherein the packaging substrate is a single-layer printed circuit board (PCB) that comprises composite fiber-based epoxy materials and includes a single layer of copper or aluminum.
16. The semiconductor component as recited in claim 14 , wherein the integrated-circuit die is a memory die that is a dynamic random-access memory die or a flash memory die, a logic die, or a system-on-chip die.
17. The semiconductor component as recited in claim 14 , wherein the signal core is copper (Cu) material.
18. The semiconductor component as recited in claim 14 , wherein the signal core is a titanium (Ti) or a tungsten (W) material.
19. The semiconductor component as recited in claim 14 , wherein the insulator is one of a polyimide (PI) material, a polybenzoxazole (PBO) material, or a borophosphosilicate glass (BPS G) material.
20. The semiconductor component as recited in claim 14 , wherein the ground shield is a copper (Cu) material.