Semiconductor device and method of forming dual-sided interconnect structures in FO-WLCSP
A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.
1. A method of making a semiconductor device, comprising:
providing a substrate including a first conductive layer formed in contact with a first surface of the substrate and a second conductive layer formed in contact with a second surface of the substrate opposite the first surface;
forming a plurality of bumps over the first conductive layer of the substrate after providing the substrate;
disposing a semiconductor die over the first surface of the substrate between the plurality of bumps;
depositing an encapsulant over the first surface and the second surface of the substrate and around the semiconductor die and plurality of bumps after forming the plurality of bumps on the substrate, wherein a portion of each of the plurality of bumps extends beyond a surface of the encapsulant;
removing a portion of the encapsulant to expose the second conductive layer of the substrate;
forming an interconnect structure over the encapsulant and semiconductor die and electrically coupled to the plurality of bumps;
removing the substrate;
forming a protection layer over the encapsulant and semiconductor die; and
removing a portion of the protection layer to expose the plurality of bumps.
2. The method of claim 1 , wherein the portion of each of the plurality of bumps extends out from the encapsulant.
3. A method of making a semiconductor device, comprising:
providing a substrate including a first surface and a second surface opposite the first surface;
forming a vertical interconnect structure over the first surface of the substrate after providing the substrate;
disposing a semiconductor die over the first surface of the substrate;
depositing an encapsulant over the first surface and the second surface of the substrate and around the semiconductor die and vertical interconnect structure, wherein a portion of the vertical interconnect structure extends beyond a surface of the encapsulant;
removing a portion of the encapsulant over the second surface of the substrate;
forming a first interconnect structure over the encapsulant and semiconductor die;
removing the substrate;
forming a protection layer over the encapsulant and semiconductor die; and
removing a portion of the protection layer to expose the vertical interconnect structure.
4. A method of making a semiconductor device, comprising:
providing a substrate including a first surface and a second surface opposite the first surface;
forming a vertical interconnect structure over the first surface of the substrate;
disposing a semiconductor die over the first surface of the substrate;
depositing an encapsulant over the first surface and the second surface of the substrate and around the semiconductor die and vertical interconnect structure, wherein a portion of the vertical interconnect structure extends beyond a surface of the encapsulant;
removing a portion of the encapsulant over the second surface of the substrate;
forming a first interconnect structure over the encapsulant and semiconductor die:
removing the substrate;
forming a protection layer over the encapsulant and semiconductor die; and
removing a portion of the protection layer to expose the vertical interconnect structure.