Infrared detector, imaging device, imaging system, and method of manufacturing infrared detector

1. An infrared detector comprising:

a substrate;

a lower contact layer formed on the substrate;

a first light receiving layer that is formed on the lower contact layer and has a quantum well structure, the first receiving light layer including:

a first semiconductor layer doped with a first conductivity-type impurity, and

a second semiconductor layer formed on the first semiconductor layer, and being doped with a second conductivity-type impurity which compensates the first conductivity-type impurity;

an intermediate contact layer formed on the first light receiving layer;

a second light receiving layer that is formed on the intermediate contact layer and has the quantum well structure, the second light receiving layer including:

the first semiconductor layer doped with the first conductivity-type impurity, and

the second semiconductor layer formed on the first semiconductor layer, and being doped with the second conductivity-type impurity which compensates the first conductivity-type impurity; and

an upper contact layer formed on the second light receiving layer.

2. The infrared detector according to claim 1 ,

wherein each of the first light receiving layer and the second light receiving layer includes a quantum well layer and a barrier layer that form the quantum well structure, and

each of the first semiconductor layer and the second semiconductor layer are layers in part of the barrier layer.

3. The infrared detector according to claim 2 ,

wherein a first interval between a lower surface of the barrier layer and a lower surface of the first semiconductor layer is equal to a second interval between an upper surface of the barrier layer and an upper surface of the first semiconductor layer.

4. The infrared detector according to claim 1 ,

wherein each of the first light receiving layer and the second light receiving layer includes a quantum well layer and a barrier layer that form the quantum well structure, and

the first semiconductor layer is the quantum well layer, and the second semiconductor layer is the barrier layer.

5. The infrared detector according to claim 1 ,

wherein a peak concentration of the second conductivity-type impurity is located at a position near a lower surface of the second semiconductor layer.

6. The infrared detector according to claim 1 ,

wherein the first conductivity-type impurity is diffused in the second semiconductor layer.

7. An imaging device comprising:

a plurality of pixels spaced at intervals in a plane including:

a substrate;

a lower contact layer formed on the substrate;

a first light receiving layer that is formed on the lower contact layer and has a quantum well structure;

an intermediate contact layer formed on the first light receiving layer;

a second light receiving layer that is formed on the intermediate contact layer and has a quantum well structure; and

an upper contact layer formed on the second light receiving layer,

wherein each of the first light receiving layer and the second light receiving layer includes:

a first semiconductor layer that is doped with a first conductivity-type impurity, and a second semiconductor layer that is formed on the first semiconductor layer, and is doped with a second conductivity-type impurity which compensates the first conductivity-type impurity.

8. The imaging device according to claim 7 , wherein

each of the first light receiving layer and the second light receiving layer includes a quantum well layer and a barrier layer that form the quantum well structure, and

each of the first semiconductor layer and the second semiconductor layer are layers in part of the barrier layer.

9. The imaging device according to claim 8 , wherein

a first interval between a lower surface of the barrier layer and a lower surface of the first semiconductor layer is equal to a second interval between an upper surface of the barrier layer and an upper surface of the first semiconductor layer.

10. The imaging device according to claim 7 , wherein

each of the first light receiving layer and the second light receiving layer includes a quantum well layer and a barrier layer that form the quantum well structure, and

the first semiconductor layer is the quantum well layer, and the second semiconductor layer is the barrier layer.

11. The imaging device according to claim 7 , wherein

a peak concentration of the second conductivity-type impurity is located at a position near a lower surface of the second semiconductor layer.

12. The imaging device according to claim 7 , wherein

the first conductivity-type impurity is diffused in the second semiconductor layer.

13. An imaging system comprising:

an imaging lens; and

an imaging device that is provided at a subsequent stage of the imaging lens and includes a plurality of pixels spaced at intervals in a plane,

wherein each of the plurality of pixels includes:

a substrate;

a lower contact layer formed on the substrate;

a first light receiving layer that is formed on the lower contact layer and has a quantum well structure;

an intermediate contact layer formed on the first light receiving layer;

a second light receiving layer that is formed on the intermediate contact layer and has a quantum well structure; and

an upper contact layer formed on the second light receiving layer,

wherein each of the first light receiving layer and the second light receiving layer includes:

a first semiconductor layer that is doped with a first conductivity-type impurity, and a second semiconductor layer that is formed on the first semiconductor layer, and is doped with a second conductivity-type impurity which compensates the first conductivity-type impurity.

14. The imaging system according to claim 13 , wherein

each of the first light receiving layer and the second light receiving layer includes a quantum well layer and a barrier layer that form the quantum well structure, and

each of the first semiconductor layer and the second semiconductor layer are layers in part of the barrier layer.

15. The imaging system according to claim 14 , wherein

a first interval between a lower surface of the barrier layer and a lower surface of the first semiconductor layer is equal to a second interval between an upper surface of the barrier layer and an upper surface of the first semiconductor layer.

16. The imaging system according to claim 13 , wherein

each of the first light receiving layer and the second light receiving layer includes a quantum well layer and a barrier layer that form the quantum well structure, and

the first semiconductor layer is the quantum well layer, and the second semiconductor layer is the barrier layer.

17. The imaging system according to claim 13 , wherein

a peak concentration of the second conductivity-type impurity is located at a position near a lower surface of the second semiconductor layer.

18. A method of manufacturing an infrared detector comprising:

providing a substrate:

forming a first contact layer on the substrate;

forming a first light receiving layer on the first contact layer;

forming an intermediate layer on the first light receiving layer;

forming a second light receiving layer on the intermediate layer; and

forming an upper contact layer on the second light receiving layer,

the first light receiving layer includes:

a first semiconductor layer doped with a first conductivity-type impurity,

a second semiconductor layer on the first semiconductor layer and doped with a second conductivity-type impurity which compensates for the first conductivity-type impurity, and

a first quantum well layer,

the second light receiving layer including:

a third semiconductor layer doped with the first conductivity-type impurity,

a fourth semiconductor layer on the third semiconductor layer and doped with the second conductivity-type impurity which compensates for the first conductivity-type impurity, and

a second quantum well layer.