IP Library Granted Patent US 10,715,026
Granted Patent B2
US 10,715,026 · App. 16/372,624 · Granted Jul 14, 2020

Gate driving circuit and power supply circuit

Inventor: Tatsuya Hirose (Yokohama, JP)
Assignee: FUJITSU LIMITED
H02M1/08H02M1/34H02M1/36H02M3/28H02M3/33507H02M3/33523H03K17/08122H02M2001/0054H02M2001/344H02M2001/348
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Quick Facts
Patent No.
US 10,715,026
App. No.
16/372,624
Granted
Jul 14, 2020
Kind
B2
Abstract

A gate driving circuit includes a first transistor, a first control circuit that changes a gate voltage of the first transistor from a low level to a high level, and a second control circuit that changes the gate voltage of the first transistor from the high level to the low level, wherein the first control circuit and the second control circuit are coupled to each other in parallel with respect to a gate of the first transistor.

Claims (33)

1. A gate driving circuit comprising:

a first transistor;

a first control circuit that changes a gate voltage of the first transistor from a low level to a high level;

a second control circuit that changes the gate voltage of the first transistor from the high level to the low level; and

a protecting circuit that suppresses overshoot of the gate voltage output by the first control circuit and does not suppress undershoot of the gate voltage output by the second control circuit,

wherein the first control circuit and the second control circuit are coupled to each other in parallel with respect to a gate of the first transistor.

2. The gate driving circuit according to claim 1 , further comprising:

a first diode that includes an anode coupled to an output terminal of the first control circuit and a cathode coupled to the gate of the first transistor; and

a second diode that includes an anode coupled to the gate of the first transistor and a cathode coupled to an output terminal of the second control circuit.

3. The gate driving circuit according to claim 1 , further comprising:

a first shaping circuit that shapes a rising edge of the gate voltage output by the first control circuit; and

a second shaping circuit that shapes a falling edge of the gate voltage output by the second control circuit.

4. The gate driving circuit according to claim 1 , wherein the first control circuit and the second control circuit are synchronized with a drain voltage of the first transistor to generate the gate voltage.

5. The gate driving circuit according to claim 1 , further comprising:

a clock generating circuit coupled to the first control circuit and the second control circuit.

6. A power supply circuit comprising:

a transformer including a primary winding and a secondary winding;

a first diode coupled to the secondary winding;

a first transistor coupled to the first diode in parallel;

a first control circuit that changes a gate voltage of the first transistor from a low level to a high level;

a second control circuit that changes the gate voltage of the first transistor from the high level to the low level; and

a protecting circuit that suppresses overshoot of the gate voltage output by the first control circuit and does not suppress undershoot of the gate voltage output by the second control circuit,

wherein the first control circuit and the second control circuit are coupled to each other in parallel with respect to a gate of the first transistor.

7. The power supply circuit according to claim 6 , wherein the first control circuit and the second control circuit are synchronized with a drain voltage of the first transistor to generate the gate voltage.

8. A power supply circuit comprising:

a transformer including a primary winding and a secondary winding;

a first transistor coupled to the primary winding;

a first control circuit that changes a gate voltage of the first transistor from a low level to a high level;

a second control circuit that changes the gate voltage of the first transistor from the high level to the low level; and

a protecting circuit that suppresses overshoot of the gate voltage output by the first control circuit and does not suppress undershoot of the gate voltage output by the second control circuit,

wherein the first control circuit and the second control circuit are coupled to each other in parallel with respect to a gate of the first transistor.

9. The power supply circuit according to claim 8 , further comprising:

a clock generating circuit coupled to the first control circuit and the second control circuit.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2025
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 073964/0516 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 27, 2024
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 069454/0333 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 2, 2019
From: HIROSE, TATSUYA
To: FUJITSU LIMITED
Reel/Frame 048765/0412 →
Priority Claims (1)
JP 2017-076809 · Apr 7, 2017 · national
Continuity (2)
Continuation PCTJP2018008626 · Mar 6, 2018
Related Publication 20190229606A1 · Jul 25, 2019