SEMICONDUCTOR SENSORS WITH CHARGE DISSIPATION LAYER AND RELATED METHODS
Implementations of image sensors may include a passivation layer coupled over a silicon layer, a color-filter-array coupled over the passivation layer, a lens coupled over the color-filter-array, and at least two optically transmissive charge dissipation layers coupled over the silicon layer.
1 . An image sensor comprising:
a passivation layer coupled over a silicon layer;
a color-filter-array coupled over the passivation layer;
a lens coupled over the color-filter-array; and
at least two optically transmissive charge dissipation layers coupled over the silicon layer.
2 . The image sensor of claim 1 , wherein one of the at least two optically transmissive charge dissipation layers is coupled between the lens and the color-filter array.
3 . The image sensor of claim 1 , wherein one of the at least two optically transmissive charge dissipation layers is coupled between the passivation layer and the color-filter array.
4 . The image sensor of claim 1 , wherein the at least two optically transmissive charge dissipation layers comprise a first optically transmissive charge dissipation layer coupled to a first side of the color-filter array and a second optically transmissive charge dissipation layer coupled to a second side of the color-filter-array opposite the first side of the color-filter-array.
5 . The image sensor of claim 1 , wherein each of the at least two optically transmissive charge dissipation layers comprise a thickness less than 0.5 microns.
6 . The image sensor of claim 1 , wherein at least one optically transmissive charge dissipation layer of the at least two optically transmissive charge dissipation layers comprise a conductive organic material.
7 . The image sensor of claim 1 , wherein the at least two optically transmissive charge dissipation layers comprise one of metallic carbon nanotubes or poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate).
8 . An image sensor comprising:
an antireflective coating layer coupled over a silicon layer;
a passivation layer coupled over the antireflective coating layer;
a color-filter-array coupled over the passivation layer;
a lens coupled over the color-filter-array; and
one or more optically transmissive charge dissipation layers coupled between the passivation layer and the lens.
9 . The image sensor of claim 8 , wherein the one or more optically transmissive charge dissipation layers are coupled to a ground.
10 . The image sensor of claim 8 , wherein the one or more optically transmissive charge dissipation layers are electrically floating.
11 . The image sensor of claim 8 , wherein the one or more optically transmissive charge dissipation layers comprise a conductive grid aligned with a perimeter of each pixel or a conductive grid aligned with a perimeter of each filter of a plurality of filters of the color-filter array.
12 . The image sensor of claim 8 , wherein the image sensor is comprised in a gapless chip-scale package.
13 . The image sensor of claim 8 , wherein the one or more optically transmissive charge dissipation layers is between the passivation layer and the color-filter-array.
14 . The image sensor of claim 8 , wherein the one or more optically transmissive charge dissipation layers comprise a thickness less than 100 angstroms.
15 . An image sensor comprising:
a passivation layer coupled over a silicon layer;
an optically transmissive charge dissipation layer coupled between the passivation layer and the silicon layer;
a color-filter-array coupled over the passivation layer; and
a lens coupled over the color-filter-array.
16 . The image sensor of claim 15 , wherein the one or more optically transmissive charge dissipation layers comprise a conductive grid.
17 . The image sensor of claim 15 , wherein the one or more optically transmissive charge dissipation layers comprise a thickness less than 100 angstroms.
18 . The image sensor of claim 15 , wherein the one or more optically transmissive charge dissipation layers are grounded.
19 . The image sensor of claim 15 , wherein the one or more optically transmissive charge dissipation layers are electrically floating.
20 . The image sensor of claim 15 , further comprising a second passivation layer, wherein the optically transmissive charge dissipation layer is coupled between the passivation layer and the second passivation layer.