IP Library Granted Patent US 10,650,847
Granted Patent B2
US 10,650,847 · App. 16/560,844 · Granted May 12, 2020

Spin-orbit torque induced magnetization switching in a magnetic recording head

Inventors: Zhanjie Li (Pleasanton, CA); Suping Song (Fremont, CA); Kuok San Ho (Emerald Hills, CA)
Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
G11B5/315G11B5/314G11B5/3116G11B5/3133G11B5/3143G11B5/3146G11B5/37G11B5/372G11B5/374G11B2005/0024
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,650,847
App. No.
16/560,844
Granted
May 12, 2020
Kind
B2
Abstract

The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the V jump due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.

Claims (34)

1. A magnetic recording head, comprising:

a main pole;

a trailing shield hot seed layer;

a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, wherein the spin Hall layer is recessed from a media facing surface; and

a spin-torque layer disposed between the main pole and the trailing shield hot seed layer, wherein the spin-torque layer includes a surface at the media facing surface.

2. The magnetic recording head of claim 1 , wherein the spin Hall layer comprises beta phase Tantalum, beta phase tungsten, platinum, hafnium, an alloy of tungsten with hafnium, iridium, or bismuth doped copper, (Bi,Sb)Te, MnIr, XMn (X=Fe, Pd, Ir, and Pt), or antiferromagnets.

3. The magnetic recording head of claim 1 , wherein the spin-torque layer is coupled to the spin Hall layer.

4. The magnetic recording head of claim 1 , wherein the spin-torque layer has a height ranging from about 3 nm to about 25 nm and a thickness ranging from about 1.5 nm to about 15 nm.

5. The magnetic recording head of claim 4 , wherein the spin Hall layer has a height ranging from about 5 nm to about 25 nm and a thickness ranging from about 2.5 nm to about 100 nm.

6. The magnetic recording head of claim 5 , wherein the height of the spin Hall layer is greater than the height of the spin-torque layer.

7. The magnetic recording head of claim 1 , wherein the spin Hall layer has a width that is greater than a width of the main pole at the media facing surface.

8. The magnetic recording head of claim 1 , wherein the spin Hall layer has a width that is greater than a width of the spin-torque layer.

9. A magnetic recording head, comprising:

a trailing shield hot seed layer;

a leading shield;

a main pole, wherein the main pole includes a first surface at a media facing surface, a second surface facing the trailing shield hot seed layer, a third surface opposite the second surface, a fourth surface connecting the second surface and the third surface, and a fifth surface opposite the fourth surface;

a spin Hall structure recessed from the media facing surface, wherein the spin Hall structure surrounds at least three surfaces of the second, third, fourth and fifth surfaces of the main pole; and

a spin-torque structure coupled to the spin Hall structure, wherein the spin-torque structure surrounds at least three surfaces of the second, third, fourth and fifth surfaces of the main pole at the media facing surface.

10. The magnetic recording head of claim 9 , wherein the spin Hall structure comprises beta phase Tantalum, beta phase tungsten, platinum, hafnium, an alloy of tungsten with hafnium, iridium, or bismuth doped copper, (Bi,Sb)Te, MnIr, XMn (X=Fe, Pd, Ir, and Pt), or antiferromagnets.

11. The magnetic recording head of claim 9 , wherein the spin-torque structure has a thickness ranging from about 1.5 nm to about 15 nm.

12. The magnetic recording head of claim 11 , wherein the spin Hall structure has a thickness ranging from about 2.5 nm to about 100 nm.

13. The magnetic recording head of claim 9 , wherein the spin-torque structure and the spin Hall structure surround the second, fourth and fifth surfaces of the main pole.

14. The magnetic recording head of claim 9 , wherein the spin-torque structure and the spin Hall structure surround the second, third, fourth and fifth surfaces of the main pole.

15. A data storage device, comprising:

a magnetic recording head, comprising:

a main pole;

a trailing shield hot seed layer;

a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, wherein the spin Hall layer is recessed from a media facing surface; and

a spin-torque layer disposed between the main pole and the trailing shield hot seed layer, wherein the spin-torque layer includes a surface at the media facing surface.

16. The data storage device of claim 15 , wherein the spin Hall layer comprises beta phase Tantalum, beta phase tungsten, platinum, hafnium, an alloy of tungsten with hafnium, iridium, or bismuth doped copper, (Bi,Sb)Te, MnIr, XMn (X=Fe, Pd, Ir, and Pt), or antiferromagnets.

17. The data storage device of claim 15 , wherein the spin-torque layer is coupled to the spin Hall layer.

18. The data storage device of claim 15 , wherein the spin-torque layer has a height ranging from about 3 nm to about 25 nm and a thickness ranging from about 1.5 nm to about 15 nm.

19. The data storage device of claim 18 , wherein the spin Hall layer has a height ranging from about 5 nm to about 25 nm and a thickness ranging from about 2.5 nm to about 100 nm.

20. The data storage device of claim 19 , wherein the height of the spin Hall layer is the same as or greater than the height of the spin-torque layer.

Assignments (5)
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059127/0001 →
SECURITY INTEREST Recorded Feb 6, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052915/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2019
From: LI, ZHANJIE; SONG, SUPING; HO, KUOK SAN
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 050715/0717 →
Continuity (3)
Continuation 15976684 · May 10, 2018
Continuation 15379226 · Dec 14, 2016
Related Publication 20190392861A1 · Dec 26, 2019