SEMICONDUCTOR STRUCTURE HAVING LAMINATE DIELECTRIC FILMS AND METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a region of semiconductor material having a major surface and a first a first insulating structure over the major surface. A first conductive electrode is over the first insulating structure and a laminate film structure is over the first conductive electrode. The laminate film structure includes a first film comprising rutile phase ruthenium dioxide adjacent to the first conductive electrode, and a second film over the first film, wherein the second film comprises a high dielectric constant dielectric material. A second conductive electrode is over the laminate film structure. In some examples, the first film is provided using atomic layer deposition. In some examples, the second film comprises rutile phase titanium dioxide formed using atomic layer deposition. In some examples, the laminate film structure can be used as part of a MIM capacitor.
1 . A semiconductor structure, comprising:
a region of semiconductor material having a major surface;
a first insulating structure over the major surface;
a first conductive electrode over the first insulating structure;
a laminate film structure over the first conductive electrode comprising:
a first film comprising rutile phase ruthenium dioxide adjacent to the first conductive electrode; and
a second film over the first film, wherein the second film comprises a high dielectric constant dielectric material; and
a second conductive electrode over the laminate film structure.
2 . The semiconductor structure of claim 1 , wherein:
the second film comprises a rutile phase titanium dioxide.
3 . The semiconductor structure of claim 1 , wherein:
the laminate film structure further comprises a third film interposed between the second film and second conductive electrode, the third film comprising a dielectric material.
4 . The semiconductor structure of claim 3 , wherein:
the third film comprises one or more of aluminum oxide, hafnium oxide, zirconium oxide, or, silicon oxide.
5 . The semiconductor structure of claim 1 , wherein:
the semiconductor structure further comprises:
a second insulating structure over the second conductive electrode; and
a trench disposed within the second insulating structure; and
the laminate film structure is disposed at least in part within the trench.
6 . The semiconductor structure of claim 5 , wherein:
the first film physically contacts the first conductive electrode within the trench.
7 . The semiconductor structure of claim 1 , further comprising:
a first conductive via coupled to the first conductive electrode; and
a second conductive via coupled to the second conductive electrode.
8 . The semiconductor structure of claim 7 , wherein:
the first conductive via a side surface of the first film and is further electrically coupled to a conductive interconnect structure separated from the first conductive electrode.
9 . The semiconductor structure of claim 7 , wherein:
the first trench electrode physically contacts the first film.
10 . The semiconductor structure of claim 1 , wherein:
the first conductive electrode has a first width;
the first film has a second width;
the second film has a third width; and
the first width and the second width are greater than the third width.
11 . The semiconductor structure of claim 1 , further comprising:
a protective structure over the second conductive electrode, the protective structure comprising:
silicon carbide layer; and
a dielectric layer over the silicon carbide layer.
12 . A semiconductor structure, comprising:
a region of semiconductor material;
a first conductive electrode over the region of semiconductor material;
a first insulating structure separating the first conductive electrode from the region of semiconductor material;
a laminate film structure over the first conductive electrode comprising:
a first film comprising rutile phase ruthenium dioxide adjacent to the first conductive electrode;
a second film over the first film, wherein the second film comprises rutile phase titanium dioxide; and
a third film over the second film wherein the third film comprises a dielectric material; and
a second conductive electrode over the laminate film structure.
13 . The semiconductor structure of claim 12 , wherein:
the third film comprises one or more of aluminum oxide, hafnium oxide, zirconium oxide, or, silicon oxide.
14 . The semiconductor structure of claim 12 , wherein:
the semiconductor structure further comprises:
a second insulating structure over the second conductive electrode; and
a trench disposed within the second insulating structure; and
the laminate film structure is disposed at least in part within the trench.
15 . The semiconductor structure of claim 12 , wherein:
the first film physically contacts the first conductive electrode within the trench.
16 . The semiconductor structure of claim 12 , further comprising:
a first conductive via coupled to the first conductive electrode; and
a second conductive via coupled to the second conductive electrode.
17 . A method of forming a semiconductor structure, comprising:
providing a region of semiconductor material having a major surface;
providing a first insulating structure over the major surface;
providing a first conductive electrode over the first insulating structure;
providing a laminate film structure over the first conductive electrode comprising:
a first film comprising rutile phase ruthenium dioxide adjacent to the first conductive electrode; and
a second film over the first film, wherein the second film comprises a high dielectric constant dielectric material; and
providing a second conductive electrode over the laminate film structure.
18 . The method of claim 17 , wherein:
providing the laminate film structure comprises providing the first film and the second film using atomic layer deposition; and
the second film comprises a rutile phase titanium dioxide.
19 . The method of claim 17 , wherein:
providing the laminate film structure further comprises providing a third film interposed between the second film and second conductive electrode, the third film comprising a dielectric material.
20 . The semiconductor structure of claim 19 , wherein:
providing the third film comprises providing one or more of aluminum oxide, hafnium oxide, zirconium oxide, or, silicon oxide.