Memory system for restraining threshold variation to improve data reading
According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes: first memory cells, first word lines, a first row decoder, and a driver circuit. The first row decoder includes first transistors capable of coupling the first word lines to first signal lines, and a first block decoder supplying a first block selection signal to the first transistors. When the controller issues a data read command, the first block decoder asserts the first block selection signal to allow the first transistors to transfer a first voltage to a selected first word line, and a second voltage to unselected other first word lines. After data is read, the first block decoder continues asserting the first block selection signal, and the driver circuit transfers a third voltage.
1. A memory system comprising:
a semiconductor memory capable of storing data, the semiconductor memory including a first block and a second block, each of the first block and the second block being a unit of data erasing; and
a controller capable of reading data from the semiconductor memory, and
wherein
the first block includes a plurality of first memory cells,
second block includes a plurality of second memory cells,
the semiconductor memory includes a plurality of first word lines coupled to the first memory cells and a plurality of second word lines coupled to the second memory cells,
semiconductor memory includes a first row decoder capable of transferring voltages to the first word lines and a second row decoder capable of transferring voltages to the second word lines,
in response to a first command for accessing data in the first block, the first command being issued by the controller to the semiconductor memory, the first row decoder is configured to transfer a first voltage to a selected first word line, and transfer a second voltage larger than the first voltage to unselected other first word lines,
after data is read from the first block, the first row decoder is configured to transfer a third voltage smaller than the first voltage to the first word lines during a first period, and
in response to a second command for accessing data in the second block during the first period, the second command being issued by the controller to the semiconductor memory, the first row decoder is configured to stop transferring a voltage to the first word lines, and the second row decoder is configured to initiate transferring voltages to the second word lines.
2. The system according to claim 1 , wherein, in response to the first command, the semiconductor memory is configured to output a busy signal notifying the controller that the semiconductor memory is in a busy state.
3. The system according to claim 2 , wherein, after the data is read from the first block, the semiconductor memory is configured to output a ready signal notifying the controller that the semiconductor memory is in a ready state.
4. The system according to claim 1 , wherein the first row decoder is configured to transfer the third voltage to all the word lines included in the first block during the first period.
5. The system according to claim 1 , wherein the first row decoder includes a first block decoder and a plurality of first transistors, each of the plurality of first transistors being capable of coupling each of the plurality of first word lines to each of a plurality of first signal lines, and
the second row decoder includes a second block decoder and a plurality of second transistors, each of the plurality of second transistors being capable of coupling each of the plurality of second word lines to each of a plurality of second signal lines.
6. The system according to claim 5 , wherein,
the first block decoder is configured to supply a first block selection signal to gates of the plurality of first transistors,
the second block decoder is configured to supply a second block selection signal to gates of the plurality of second transistors, and
in response to the second command, the first block decoder is configured to negate the first block selection signal and the second block decoder is configured to assert the second block selection signal.
7. The system according to claim 6 , wherein when the first voltage and the second voltage are transferred to the first word lines, a potential of the first block selection signal is set to a fourth voltage larger than the second voltage.
8. The system according to claim 6 , wherein upon the negation of the first block selection signal, the first word lines are set in an electrically floating state.
9. The system according to claim 6 , wherein, when the controller issues the first command to the semiconductor memory, the first block decoder is configured to assert the first block selection signal and the second block decoder is configured to assert the second block selection signal.
10. The system according to claim 9 , wherein,
in response to the asserted first block selection signal, the first transistors are configured to transfer the third voltage to the first word lines, and
in response to the asserted second block selection signal, the second transistors are configured to transfer the third voltage to the second word lines.
11. The system according to claim 1 , wherein the first period is equal to or longer than a period during which a potential of the first word lines is the second voltage.