Magnetic sensor bias point adjustment method
The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
1. A tunnel magnetoresistive (TMR) sensor device, comprising:
a first resistor comprising a first plurality of TMR structures;
a second resistor comprising a second plurality of TMR structures, wherein the number of first plurality of TMR structures is greater than the number of second plurality of TMR structures;
a third resistor comprising a third plurality of TMR structures; and
a fourth resistor comprising a fourth plurality of TMR structures, wherein the number of the third plurality of TMR structures is greater than the number of the fourth plurality of TMR structures.
2. The TMR sensor device of claim 1 , wherein the TMR structures of the first plurality of TMR structures are identical to each other.
3. The TMR sensor device of claim 2 , wherein the TMR structures of the second plurality of TMR structures are identical to each other.
4. The TMR sensor device of claim 3 , wherein the TMR structures of the first plurality of TMR structures are different from the TMR structures of the second plurality of TMR structures.
5. The TMR sensor device of claim 1 , wherein the number of the third plurality of TMR structures is equal to the number of the first plurality of TMR structures.
6. The TMR sensor device of claim 5 , wherein the number of the fourth plurality of TMR structures is equal to the number of the second plurality of TMR structures.
7. The TMR sensor device of claim 6 , wherein the TMR structures of the third plurality of TMR structures are identical to each other.
8. The TMR sensor device of claim 7 , wherein the TMR structures of the fourth plurality of TMR structures are identical to each other.
9. The TMR sensor device of claim 8 , wherein the TMR structures of the third plurality of TMR structures are identical to the TMR structures of the first plurality of TMR structures.
10. The TMR sensor device of claim 9 , wherein the TMR structures of the fourth plurality of TMR structures are identical to the TMR structures of the second plurality of TMR structures.
11. The TMR sensor device of claim 1 , wherein a working field bias of the TMR sensor device is non-zero.
12. A TMR sensor device, comprising:
a plurality of resistors that each contain a plurality of TMR structures, wherein:
at least two resistors of the plurality of resistors contain a different amount of TMR structures,
the TMR structures of the at least two resistors are different,
at least one TMR structure contains a synthetic antiferromagnetic structure, and
there are more TMR structures that contain the synthetic antiferromagnetic structure than TMR structures that do not contain the synthetic antiferromagnetic structure.
13. The TMR sensor device of claim 12 , wherein the plurality of resistors have substantially identical RA.
14. The TMR sensor device of claim 12 , wherein the TMR sensor arrangement has a bias point that non-zero Oe.
15. The TMR sensor device of claim 12 , wherein at least two resistors of the plurality of resistors contain a same amount of TMR structures.
16. The TMR sensor device of claim 12 , wherein each TMR structure has a same height, a same length, and a same width.
17. A method of manufacturing a TMR sensor device, comprising:
forming a first resistor comprising a first plurality of TMR structures;
forming a second resistor comprising a second plurality of TMR structures, wherein the number of the first plurality of TMR structures is more than two times the number of the second plurality of TMR structures;
forming a third resistor comprising a third plurality of TMR structures, the third plurality of TMR structures being the same as the first plurality of TMR structures; and
forming a fourth resistor comprising a fourth plurality of TMR structures, the fourth plurality of TMR structures being the same as the second plurality of TMR structures, wherein the first plurality of TMR structures is different than the second plurality of TMR structures.
18. The method of claim 17 , wherein the third resistor and the first resistor are substantially identical.
19. The method of claim 17 , wherein each TMR structure of the first plurality of TMR structures and each TMR structure of the second plurality of TMR structures have a same height, a same length, and a same width.
20. The method of claim 17 , wherein the second resistor and the fourth resistor are substantially identical.