Magnetoresistance structure including two hard masks
A magnetoresistance structure includes a base that includes a conductive layer and a first active element on and in direct contact with the conductive layer. The magnetoresistance structure also includes a pillar structure connected to the base. The pillar structure includes a first hard mask, a capping material, a second active element and a tunnel layer. The magnetoresistance structure also further includes an etching barrier deposited on the pillar and the base; a second hard mask deposited on the etching barrier; and a capping barrier deposited on the second hard mask and covering side walls of the base.
1. A magnetoresistance structure comprising:
a base comprising:
a conductive layer; and
a first active element on and in direct contact with the conductive layer;
a pillar structure connected to the base, the pillar structure comprising:
a first hard mask;
a capping material;
a second active element; and
a tunnel layer;
an etching barrier deposited on the pillar and the base;
a second hard mask deposited on the etching barrier; and
a capping barrier deposited on the second hard mask and covering side walls of the base.
2. The magnetoresistance structure of claim 1 , wherein the base and the pillar structure form one of a tunneling magnetoresistance (TMR) stack or a magnetic tunnel junction (MTJ) stack.
3. The magnetoresistance structure of claim 1 , wherein the capping barrier comprises silicon nitride.
4. The magnetoresistance structure of claim 1 , wherein the tunnel layer comprises a layer of magnesium oxide.
5. The magnetoresistance structure of claim 1 , wherein the tunnel layer comprises a layer of aluminum oxide.
6. The magnetoresistance structure of claim 1 , wherein the capping material comprises a layer of silicon nitride.
7. The magnetoresistance structure of claim 1 , wherein the capping material comprises a layer of silicon dioxide.
8. The magnetoresistance structure of claim 1 , further comprising a substrate directly connected to the conductive layer of the base,
wherein the substrate comprises one of silicon dioxide or silicon nitride.
9. The magnetoresistance structure of claim 8 , the capping barrier is in direct contact with the substrate.
10. The magnetoresistance structure of claim 1 , wherein the first or second hard mask comprises silicon dioxide.
11. The magnetoresistance structure of claim 1 , wherein the first or second hard mask comprises silicon nitride.
12. The magnetoresistance structure of claim 1 , wherein the first active element, the second active element and the tunneling barrier are part of a tunneling magnetoresistance (TMR) element or a magnetic tunnel junction (MTJ).
13. The magnetoresistance structure of claim 1 , wherein the conductive layer is titanium nitride.
14. The magnetoresistance structure of claim 1 , wherein the tunnel layer is in direct contact with the first active element.
15. The magnetoresistance structure of claim 13 , wherein the tunnel layer is in direct contact with the second active element.
16. The magnetoresistance structure of claim 1 , wherein the capping barrier covers the side walls comprising sides of the conductive layer and sides of the first active element.
17. The magnetoresistance structure of claim 16 , wherein the capping barrier covers side walls of the etching barrier.
18. The magnetoresistance structure of claim 17 , wherein the capping barrier covers side walls of the second hard mask.
19. The magnetoresistance structure of claim 1 , wherein the second hard mask is separated from the first active element by the etching barrier.
20. The magnetoresistance element of claim 1 , wherein the first active element and the second active element each include two or more sublayers.